JPS5798192A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5798192A
JPS5798192A JP17291780A JP17291780A JPS5798192A JP S5798192 A JPS5798192 A JP S5798192A JP 17291780 A JP17291780 A JP 17291780A JP 17291780 A JP17291780 A JP 17291780A JP S5798192 A JPS5798192 A JP S5798192A
Authority
JP
Japan
Prior art keywords
line
gate
erase
cell
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17291780A
Other languages
English (en)
Other versions
JPS623995B2 (ja
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17291780A priority Critical patent/JPS5798192A/ja
Priority to DE8181305348T priority patent/DE3174417D1/de
Priority to EP81305348A priority patent/EP0054355B1/en
Priority to US06/321,320 priority patent/US4437172A/en
Publication of JPS5798192A publication Critical patent/JPS5798192A/ja
Publication of JPS623995B2 publication Critical patent/JPS623995B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
JP17291780A 1980-12-08 1980-12-08 Semiconductor storage device Granted JPS5798192A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device
DE8181305348T DE3174417D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
EP81305348A EP0054355B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/321,320 US4437172A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5798192A true JPS5798192A (en) 1982-06-18
JPS623995B2 JPS623995B2 (ja) 1987-01-28

Family

ID=15950739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17291780A Granted JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5798192A (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Also Published As

Publication number Publication date
JPS623995B2 (ja) 1987-01-28

Similar Documents

Publication Publication Date Title
TW328179B (en) Non-volatile semiconductor memory device
JPS6432494A (en) Non-volatile semiconductor storage device
TW329519B (en) The non-volatile semiconductor memory device
ATE238609T1 (de) Selbstjustierende flash-eeprom-zelle mit doppelbit-geteiltem gat
EP0083194A3 (en) Electrically erasable programmable read only memory cell having a single transistor
KR900011009A (ko) 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
EP0052566A3 (en) Electrically erasable programmable read-only memory
EP0739016A3 (en) Non-volatile semiconductor memory device with block erase function
EP0616334A4 (en) Non-volatile semiconductor memory device with a floating gate.
EP0361972A3 (en) Non-volatile semiconductor memory device with nand type memory cell arrays
JPS5792488A (en) Nonvolatile memory
US5894438A (en) Method for programming and erasing a memory cell of a flash memory device
JPS5798191A (en) Semiconductor storage device
JPS5647992A (en) Nonvolatile semiconductor memory
JPS5798192A (en) Semiconductor storage device
JPS57105890A (en) Semiconductor storage device
JPS57150192A (en) Non-volatile semiconductor memory device
JPS5798190A (en) Semiconductor storage device
JPS55105374A (en) Nonvolatile semiconductor memory
JPS52104078A (en) Semiconductor unit
KR20010061509A (ko) 플래쉬 메모리 소자의 소거 방법
JPS5798193A (en) Semiconductor storage device
KR970003255A (ko) 비휘발성 메모리 장치
DE59602264D1 (de) Sram-speicherzelle
JPS6432495A (en) Non-volatile semiconductor storage device