JPS5647992A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS5647992A
JPS5647992A JP12435179A JP12435179A JPS5647992A JP S5647992 A JPS5647992 A JP S5647992A JP 12435179 A JP12435179 A JP 12435179A JP 12435179 A JP12435179 A JP 12435179A JP S5647992 A JPS5647992 A JP S5647992A
Authority
JP
Japan
Prior art keywords
erasure
memory cell
transistor
voltage
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12435179A
Other languages
Japanese (ja)
Other versions
JPS6120958B2 (en
Inventor
Hiroshi Iwahashi
Kouji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12435179A priority Critical patent/JPS5647992A/en
Publication of JPS5647992A publication Critical patent/JPS5647992A/en
Publication of JPS6120958B2 publication Critical patent/JPS6120958B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To make electric erasure possible even when a memory cell is made of one transistor, by controlling column and row voltages of floating gate type MOS transistor ROM cells of matrix constitution according to readout, write-in and erasure modes. CONSTITUTION:When terminal 18 of control part 11a1 is applied with a fixed negative voltage, row line 91, etc., selected by decoder 241 are held at a negative potential, which corresponds to a control voltage, through N-Well layer 131, etc. Column line 11, etc., selected by column decoder 30, on the other hand, are held at a fixed positive potential by erasure control circuit 4. Then, the control voltage and drain voltage of the floating gate type MOS trasistor forming ROM memory cell C11 matrix-connected to lines 91 and 11 cause cell C11 controlled to a fixed value by lines 91 and 11 to break down. In write-in and erasure modes, a memory cell formed by one transistor is similarly erased electrically in a short time without using ultraviolet rays, etc.
JP12435179A 1979-09-27 1979-09-27 Nonvolatile semiconductor memory Granted JPS5647992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12435179A JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12435179A JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5647992A true JPS5647992A (en) 1981-04-30
JPS6120958B2 JPS6120958B2 (en) 1986-05-24

Family

ID=14883222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12435179A Granted JPS5647992A (en) 1979-09-27 1979-09-27 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5647992A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827372A (en) * 1981-08-12 1983-02-18 Hitachi Ltd Non-volatile memory device
JPS58501563A (en) * 1981-09-28 1983-09-16 モトロ−ラ・インコ−ポレ−テツド Column and row erasable EEPROM
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
JPH02108293A (en) * 1988-10-15 1990-04-20 Sony Corp Address decoder circuit for non-volatile memory
JPH02127585A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Transformation of pressed woven fabric in paper-making machine
JPH02127590A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Fabric having hydrophilic and hydrophobic coating
JPH02127591A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Fabric for paper-making machine, discharge of which is controlled
JPH03501374A (en) * 1987-10-07 1991-03-28 タンフェルト　インコーポレイテッド Compressed felt for paper making
JPH0561720B2 (en) * 1981-09-28 1993-09-06 Motorola Inc

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827372A (en) * 1981-08-12 1983-02-18 Hitachi Ltd Non-volatile memory device
JPS58501563A (en) * 1981-09-28 1983-09-16 モトロ−ラ・インコ−ポレ−テツド Column and row erasable EEPROM
JPH0561720B2 (en) * 1981-09-28 1993-09-06 Motorola Inc
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
JPH03501374A (en) * 1987-10-07 1991-03-28 タンフェルト　インコーポレイテッド Compressed felt for paper making
JPH02108293A (en) * 1988-10-15 1990-04-20 Sony Corp Address decoder circuit for non-volatile memory
JPH02127585A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Transformation of pressed woven fabric in paper-making machine
JPH02127590A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Fabric having hydrophilic and hydrophobic coating
JPH02127591A (en) * 1988-10-31 1990-05-16 Albany Internatl Corp Fabric for paper-making machine, discharge of which is controlled

Also Published As

Publication number Publication date
JPS6120958B2 (en) 1986-05-24

Similar Documents

Publication Publication Date Title
JP3167919B2 (en) Nonvolatile semiconductor memory having NAND structure and method of programming the same
US4561004A (en) High density, electrically erasable, floating gate memory cell
US4377818A (en) High density electrically programmable ROM
US4258466A (en) High density electrically programmable ROM
US4122544A (en) Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US5742542A (en) Non-volatile memory cells using only positive charge to store data
JPS57105889A (en) Semiconductor storage device
US4317272A (en) High density, electrically erasable, floating gate memory cell
TW328179B (en) Non-volatile semiconductor memory device
JPS5542307A (en) Semiconductor memory unit
EP0083194A3 (en) Electrically erasable programmable read only memory cell having a single transistor
JPH02240960A (en) Semiconductor device
JPS63211767A (en) Semiconductor storage device
JPS5647992A (en) Nonvolatile semiconductor memory
JPS5792488A (en) Nonvolatile memory
JPH0360079A (en) Nonvolatile semiconductor memory
JPS5798191A (en) Semiconductor storage device
JPS57150192A (en) Non-volatile semiconductor memory device
JPS55111173A (en) Semiconductor memory device
JP2839718B2 (en) Method for selectively programming non-volatile memory
JPS57120297A (en) Semiconductor storage device
JPS57105890A (en) Semiconductor storage device
JPS5727493A (en) Semiconductor storage device and its write-in method
JPS6433961A (en) Mos composite memory device
JPH065873A (en) Nonvolatile semiconductor memory