JPS57105889A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57105889A
JPS57105889A JP55180950A JP18095080A JPS57105889A JP S57105889 A JPS57105889 A JP S57105889A JP 55180950 A JP55180950 A JP 55180950A JP 18095080 A JP18095080 A JP 18095080A JP S57105889 A JPS57105889 A JP S57105889A
Authority
JP
Japan
Prior art keywords
layer
memory cell
gate
erase
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55180950A
Other versions
JPS6034199B2 (en
Inventor
Fujio Masuoka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP55180950A priority Critical patent/JPS6034199B2/ja
Priority claimed from EP19810305347 external-priority patent/EP0053878B1/en
Publication of JPS57105889A publication Critical patent/JPS57105889A/en
Publication of JPS6034199B2 publication Critical patent/JPS6034199B2/ja
Application status is Expired legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Abstract

PURPOSE:To achieve a programmable ROM in which electric erase of data is obtainable, by changing a voltage given to the erase gate of a memory cell and measuring amount of charge stored to a floating gate. CONSTITUTION:A region ABCD indicates a memory cell for one bit's share of this semiconductor storage device. This memory cell consists of a MOS transistor, in which a conductor layer 15 of the 2nd layer is made of a floating gate, conductor layer 18 of the 3rd layer is of a control gate, conductor layer 14 of the 1st layer is of erase gate, N<+> type semiconductor layer 19A is taken as the drain and N<+> type semiconductor layer 19C is taken as the source.
JP55180950A 1980-12-20 1980-12-20 Expired JPS6034199B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180950A JPS6034199B2 (en) 1980-12-20 1980-12-20

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP55180950A JPS6034199B2 (en) 1980-12-20 1980-12-20
EP19810305347 EP0053878B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
DE19813171836 DE3171836D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/320,935 US4466081A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57105889A true JPS57105889A (en) 1982-07-01
JPS6034199B2 JPS6034199B2 (en) 1985-08-07

Family

ID=16092103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180950A Expired JPS6034199B2 (en) 1980-12-20 1980-12-20

Country Status (1)

Country Link
JP (1) JPS6034199B2 (en)

Cited By (81)

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JPH01173494A (en) * 1987-12-28 1989-07-10 Toshiba Corp Nonvolatile semiconductor memory device
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
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EP2416323A1 (en) 2010-08-06 2012-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
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EP2466587A2 (en) 2010-12-17 2012-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
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KR20120102018A (en) 2011-03-07 2012-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of driving semiconductor device
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US8358530B2 (en) 2010-09-10 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103003934A (en) * 2010-07-16 2013-03-27 株式会社半导体能源研究所 Semiconductor device
KR20130042486A (en) 2010-04-07 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
KR20130079450A (en) 2010-06-04 2013-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20130118893A (en) 2010-11-05 2013-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
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KR20130142109A (en) 2010-10-29 2013-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Storage device
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JPH01173494A (en) * 1987-12-28 1989-07-10 Toshiba Corp Nonvolatile semiconductor memory device
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