JPS57150192A - Non-volatile semiconductor memory device - Google Patents
Non-volatile semiconductor memory deviceInfo
- Publication number
- JPS57150192A JPS57150192A JP3633281A JP3633281A JPS57150192A JP S57150192 A JPS57150192 A JP S57150192A JP 3633281 A JP3633281 A JP 3633281A JP 3633281 A JP3633281 A JP 3633281A JP S57150192 A JPS57150192 A JP S57150192A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- write
- leakage current
- floating gate
- volatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To increase a write margin through the reduction in a leakage current of a non-selection memory cell without lowering the injection efficiency of electrons to a floating gate, by setting the source of the memory cell selected at write to almost ground level. CONSTITUTION:When a row line R1 is selected via a row decoder 60, a diffusion layer is connected, and transistors T31... prevented for the reduction in current provided at output bit circuits 101... turn on and the source of memory cells M11-M1n selected is set to almost ground potential. Thus, the write is made in the state that the leakage current to the non-selection memory cell due to floating of a floating gate potential and punch-through is effectively suppressed. As a result, the leakage current to the non-selection memory cell is reduced without lowering the injection efficiency of electrons to the floating gate, and a non-volatile semiconductor memory device having large write-in margin is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3633281A JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3633281A JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57150192A true JPS57150192A (en) | 1982-09-16 |
JPS6126158B2 JPS6126158B2 (en) | 1986-06-19 |
Family
ID=12466867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3633281A Granted JPS57150192A (en) | 1981-03-13 | 1981-03-13 | Non-volatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57150192A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052999A (en) * | 1983-07-11 | 1985-03-26 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Memory device |
JPS63193400A (en) * | 1987-02-06 | 1988-08-10 | Nec Corp | Electrically writable read-only memory |
JPH0247922A (en) * | 1988-08-09 | 1990-02-16 | Kawasaki Steel Corp | Programmable logic element |
US5677875A (en) * | 1995-02-28 | 1997-10-14 | Nec Corporation | Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines |
JP2005353257A (en) * | 2004-06-08 | 2005-12-22 | Samsung Electronics Co Ltd | Semiconductor memory device |
JP2009158094A (en) * | 2009-04-14 | 2009-07-16 | Renesas Technology Corp | Nonvolatile storage device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56501141A (en) * | 1979-09-17 | 1981-08-13 |
-
1981
- 1981-03-13 JP JP3633281A patent/JPS57150192A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56501141A (en) * | 1979-09-17 | 1981-08-13 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052999A (en) * | 1983-07-11 | 1985-03-26 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Memory device |
JPS63193400A (en) * | 1987-02-06 | 1988-08-10 | Nec Corp | Electrically writable read-only memory |
JPH0247922A (en) * | 1988-08-09 | 1990-02-16 | Kawasaki Steel Corp | Programmable logic element |
US5677875A (en) * | 1995-02-28 | 1997-10-14 | Nec Corporation | Non-volatile semiconductor memory device configured to minimize variations in threshold voltages of non-written memory cells and potentials of selected bit lines |
JP2005353257A (en) * | 2004-06-08 | 2005-12-22 | Samsung Electronics Co Ltd | Semiconductor memory device |
JP2009158094A (en) * | 2009-04-14 | 2009-07-16 | Renesas Technology Corp | Nonvolatile storage device |
Also Published As
Publication number | Publication date |
---|---|
JPS6126158B2 (en) | 1986-06-19 |
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