JPS5279884A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS5279884A
JPS5279884A JP15889975A JP15889975A JPS5279884A JP S5279884 A JPS5279884 A JP S5279884A JP 15889975 A JP15889975 A JP 15889975A JP 15889975 A JP15889975 A JP 15889975A JP S5279884 A JPS5279884 A JP S5279884A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
erasing
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15889975A
Other languages
Japanese (ja)
Other versions
JPS6029232B2 (en
Inventor
Masanori Kikuchi
Shuichi Oya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15889975A priority Critical patent/JPS6029232B2/en
Publication of JPS5279884A publication Critical patent/JPS5279884A/en
Publication of JPS6029232B2 publication Critical patent/JPS6029232B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Abstract

PURPOSE:To obtain a memory device which operates at high speeds at realtively low voltage by utilizing the injection phenomenon of the electrons and holes of high energy produced by avalanche breakdown into selective floating gates, for writing and erasing.
JP15889975A 1975-12-26 1975-12-26 Non-volatile semiconductor memory device Expired JPS6029232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15889975A JPS6029232B2 (en) 1975-12-26 1975-12-26 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15889975A JPS6029232B2 (en) 1975-12-26 1975-12-26 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5279884A true JPS5279884A (en) 1977-07-05
JPS6029232B2 JPS6029232B2 (en) 1985-07-09

Family

ID=15681789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15889975A Expired JPS6029232B2 (en) 1975-12-26 1975-12-26 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6029232B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128872A (en) * 1979-03-27 1980-10-06 Sanyo Electric Co Ltd Semiconductor memory
JPS60134477A (en) * 1983-12-23 1985-07-17 Toshiba Corp Nonvolatile memory and manufacture thereof
JPS60207385A (en) * 1984-03-31 1985-10-18 Toshiba Corp Semiconductor memory device
US5535158A (en) * 1993-12-01 1996-07-09 Nec Corporation Non-volatile semiconductor memory device and method for erasure and production thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128872A (en) * 1979-03-27 1980-10-06 Sanyo Electric Co Ltd Semiconductor memory
JPS60134477A (en) * 1983-12-23 1985-07-17 Toshiba Corp Nonvolatile memory and manufacture thereof
JPS60207385A (en) * 1984-03-31 1985-10-18 Toshiba Corp Semiconductor memory device
US5535158A (en) * 1993-12-01 1996-07-09 Nec Corporation Non-volatile semiconductor memory device and method for erasure and production thereof

Also Published As

Publication number Publication date
JPS6029232B2 (en) 1985-07-09

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