JPS55128872A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS55128872A
JPS55128872A JP3662079A JP3662079A JPS55128872A JP S55128872 A JPS55128872 A JP S55128872A JP 3662079 A JP3662079 A JP 3662079A JP 3662079 A JP3662079 A JP 3662079A JP S55128872 A JPS55128872 A JP S55128872A
Authority
JP
Japan
Prior art keywords
approx
strain
drain
vicinity
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3662079A
Other languages
Japanese (ja)
Inventor
Yasuki Rai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3662079A priority Critical patent/JPS55128872A/en
Publication of JPS55128872A publication Critical patent/JPS55128872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To perform a memory function for a semiconductor memory stably even if strain is thermally produced thereat by increasing the thickness of the insulating film in the vicinity of the end surface of a channel at the portion except the portion making contact with a source and a drain. CONSTITUTION:A first insulating film 5 is formed in approx. 600Angstrom on a channel region, only the central portion 52 is selectively etched to form in approx. 200Angstrom . Thus, the film 5 may become thicker than the central portion 51 in thw vicinity of the end surface making no contact with source 2 and drain 3. According to this configuration since the portion 51 is formed thickner, no crack occurs nor electric field is concentrated even if strain is applied to the portion 51 due to the difference in thermal expansion coefficient between the field oxide film 11 and a substrate 1. Thus, no apprehension of short is expected to perform stable memory function.
JP3662079A 1979-03-27 1979-03-27 Semiconductor memory Pending JPS55128872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3662079A JPS55128872A (en) 1979-03-27 1979-03-27 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3662079A JPS55128872A (en) 1979-03-27 1979-03-27 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55128872A true JPS55128872A (en) 1980-10-06

Family

ID=12474838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3662079A Pending JPS55128872A (en) 1979-03-27 1979-03-27 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55128872A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226181A (en) * 1984-04-25 1985-11-11 Nec Corp Non-volatile semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279884A (en) * 1975-12-26 1977-07-05 Nec Corp Non-volatile semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279884A (en) * 1975-12-26 1977-07-05 Nec Corp Non-volatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226181A (en) * 1984-04-25 1985-11-11 Nec Corp Non-volatile semiconductor memory device

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