JPS6467975A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6467975A
JPS6467975A JP22493187A JP22493187A JPS6467975A JP S6467975 A JPS6467975 A JP S6467975A JP 22493187 A JP22493187 A JP 22493187A JP 22493187 A JP22493187 A JP 22493187A JP S6467975 A JPS6467975 A JP S6467975A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
region
ions
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22493187A
Other languages
Japanese (ja)
Inventor
Masato Mizukoshi
Eiji Kawasaki
Takeshi Fukazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP22493187A priority Critical patent/JPS6467975A/en
Publication of JPS6467975A publication Critical patent/JPS6467975A/en
Pending legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To miniaturize a polycrystalline silicon film and to easily obtain insulation at the time of high temperature by selectively implanting predetermined ions of oxygen or the like to the polycrystalline silicon film to enhance the resistance of a nondiffused section. CONSTITUTION:An insulating substrate 10 is made of a single-crystal silicon substrate having a thermal silicon oxide film 112 having approx. 0.5mum of thickness on one main surface. A recess 116 is formed on one main surface of its opposite side, and its thinned section forms a diaphragm 117. Regions 12, 13, 14 are formed on a polycrystalline silicon film 11. The polycrystalline silicon piezoresistance element region 12 and the polycrystalline silicon output wiring region 13 are of dopant-diffused P<-> and P<+> type regions having approx. 0.5mum of thickness, and formed at predetermined positions on the film 112. The high resistance region 14 is of a nondoped nondiffused section. This region 14 is formed with a mask for selectively implanting oxygen ions on the film 11, and formed by removing the mask after the ions are implanted.
JP22493187A 1987-09-08 1987-09-08 Semiconductor device and manufacture thereof Pending JPS6467975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22493187A JPS6467975A (en) 1987-09-08 1987-09-08 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22493187A JPS6467975A (en) 1987-09-08 1987-09-08 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6467975A true JPS6467975A (en) 1989-03-14

Family

ID=16821421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22493187A Pending JPS6467975A (en) 1987-09-08 1987-09-08 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6467975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587648A (en) * 1991-09-30 1993-04-06 Nissan Motor Co Ltd Semiconductor stress detector
JPH0587649A (en) * 1991-09-30 1993-04-06 Nissan Motor Co Ltd Semiconductor stress detector
JP2006184075A (en) * 2004-12-27 2006-07-13 Denso Corp Pressure sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587648A (en) * 1991-09-30 1993-04-06 Nissan Motor Co Ltd Semiconductor stress detector
JPH0587649A (en) * 1991-09-30 1993-04-06 Nissan Motor Co Ltd Semiconductor stress detector
JP2006184075A (en) * 2004-12-27 2006-07-13 Denso Corp Pressure sensor

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