JPS57191539A - Semiconductor ion sensor - Google Patents

Semiconductor ion sensor

Info

Publication number
JPS57191539A
JPS57191539A JP56076959A JP7695981A JPS57191539A JP S57191539 A JPS57191539 A JP S57191539A JP 56076959 A JP56076959 A JP 56076959A JP 7695981 A JP7695981 A JP 7695981A JP S57191539 A JPS57191539 A JP S57191539A
Authority
JP
Japan
Prior art keywords
area
silicon layer
substrate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076959A
Other languages
Japanese (ja)
Other versions
JPH027423B2 (en
Inventor
Toshihide Kuriyama
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56076959A priority Critical patent/JPS57191539A/en
Publication of JPS57191539A publication Critical patent/JPS57191539A/en
Publication of JPH027423B2 publication Critical patent/JPH027423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

PURPOSE:To facilitate manufacture and to improve yield by providing a silicon layer on a sapphire insulating substrate. CONSTITUTION:At one end on a thin and long sapphire substrate 1, a semiconductor silicon area for constitution part of a sensor covered with an ion sensitive film 9 is formed. From this area 2, a drain area 4, a source area 3, and an earth area the extended to the other end of the substrate 1; the drain area 4 is connected to a drain electrode, and the source area 3 and earth area 5 are short- circuited by a source electrode. Consequently, the reverse surface of the silicon layer is insulated already in the stage of a wafer, and the silicon layer is etched into an island and oxidized thermally to form an insulating film over the surface, thus completely insulating and separating the silicon layer.
JP56076959A 1981-05-21 1981-05-21 Semiconductor ion sensor Granted JPS57191539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076959A JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076959A JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Publications (2)

Publication Number Publication Date
JPS57191539A true JPS57191539A (en) 1982-11-25
JPH027423B2 JPH027423B2 (en) 1990-02-19

Family

ID=13620318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076959A Granted JPS57191539A (en) 1981-05-21 1981-05-21 Semiconductor ion sensor

Country Status (1)

Country Link
JP (1) JPS57191539A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59183317A (en) * 1983-03-26 1984-10-18 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Method and device for regenerating position of reference
JPS6082846A (en) * 1983-10-12 1985-05-11 Sumitomo Electric Ind Ltd Electric field effect type semiconductor sensor
JPS6150263U (en) * 1984-09-05 1986-04-04
JPS6150262U (en) * 1984-09-05 1986-04-04
JPS63165747A (en) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor ion sensor
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59183317A (en) * 1983-03-26 1984-10-18 ドクトル・ヨハネス・ハイデンハイン・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング Method and device for regenerating position of reference
JPH0352808B2 (en) * 1983-03-26 1991-08-13 Dokutoru Yohanesu Haidenhain Gmbh
JPS6082846A (en) * 1983-10-12 1985-05-11 Sumitomo Electric Ind Ltd Electric field effect type semiconductor sensor
JPS6150263U (en) * 1984-09-05 1986-04-04
JPS6150262U (en) * 1984-09-05 1986-04-04
JPH0345177Y2 (en) * 1984-09-05 1991-09-24
JPS63165747A (en) * 1986-12-26 1988-07-09 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor ion sensor
JPH0432344B2 (en) * 1986-12-26 1992-05-29
US8502277B2 (en) 2003-08-29 2013-08-06 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same
US8766326B2 (en) 2003-08-29 2014-07-01 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor
US8772099B2 (en) 2003-08-29 2014-07-08 Japan Science And Technology Agency Method of use of a field-effect transistor, single-electron transistor and sensor
US9506892B2 (en) 2003-08-29 2016-11-29 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same

Also Published As

Publication number Publication date
JPH027423B2 (en) 1990-02-19

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