JPS57191540A - Semiconductor field effect type ion sensor - Google Patents

Semiconductor field effect type ion sensor

Info

Publication number
JPS57191540A
JPS57191540A JP56076960A JP7696081A JPS57191540A JP S57191540 A JPS57191540 A JP S57191540A JP 56076960 A JP56076960 A JP 56076960A JP 7696081 A JP7696081 A JP 7696081A JP S57191540 A JPS57191540 A JP S57191540A
Authority
JP
Japan
Prior art keywords
ion sensor
layer
field effect
effect type
sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56076960A
Other languages
Japanese (ja)
Other versions
JPH029306B2 (en
Inventor
Toshihide Kuriyama
Hiroshi Sakuma
Hiromitsu Shiraki
Tatsuo Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56076960A priority Critical patent/JPS57191540A/en
Publication of JPS57191540A publication Critical patent/JPS57191540A/en
Publication of JPH029306B2 publication Critical patent/JPH029306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

PURPOSE:To obtain easily manufacturable ion sensor while making insulation complete, by providing mutually independent semiconductor silicon layers ona sapphire insulating substrate. CONSTITUTION:At one end of a sapphire substrate 1 in a thin and long plane shape, a semiconductor silicon layer 2 is provided and an ion sensitvie film 9 is stuck on said layer 2, thus forming a semiconductor field effect type ion sensor. In this structure, the reverse surface of the layer 2 is insulated already and the top surface of this silicon layer is etched into an island to insulate and separate the ion sensor. Since this etching hardly extends laterally, a wafer is utilized effectively and plural ion sensor differing is kind are formed on the same sapphire to realize a multisensor.
JP56076960A 1981-05-21 1981-05-21 Semiconductor field effect type ion sensor Granted JPS57191540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076960A JPS57191540A (en) 1981-05-21 1981-05-21 Semiconductor field effect type ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076960A JPS57191540A (en) 1981-05-21 1981-05-21 Semiconductor field effect type ion sensor

Publications (2)

Publication Number Publication Date
JPS57191540A true JPS57191540A (en) 1982-11-25
JPH029306B2 JPH029306B2 (en) 1990-03-01

Family

ID=13620348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076960A Granted JPS57191540A (en) 1981-05-21 1981-05-21 Semiconductor field effect type ion sensor

Country Status (1)

Country Link
JP (1) JPS57191540A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171852A (en) * 1983-03-22 1984-09-28 Nec Corp Semiconductor ion sensor
JPS61191955A (en) * 1985-02-20 1986-08-26 Toshiba Corp Semiconductor sensor and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171852A (en) * 1983-03-22 1984-09-28 Nec Corp Semiconductor ion sensor
JPH0429974B2 (en) * 1983-03-22 1992-05-20
JPS61191955A (en) * 1985-02-20 1986-08-26 Toshiba Corp Semiconductor sensor and manufacture thereof

Also Published As

Publication number Publication date
JPH029306B2 (en) 1990-03-01

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