JPS57112028A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57112028A
JPS57112028A JP18791180A JP18791180A JPS57112028A JP S57112028 A JPS57112028 A JP S57112028A JP 18791180 A JP18791180 A JP 18791180A JP 18791180 A JP18791180 A JP 18791180A JP S57112028 A JPS57112028 A JP S57112028A
Authority
JP
Japan
Prior art keywords
film
layer
formed
polycrystalline si
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18791180A
Inventor
Akira Abiru
Kazunori Imaoka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18791180A priority Critical patent/JPS57112028A/en
Publication of JPS57112028A publication Critical patent/JPS57112028A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To realize a layer of very small dimensions of a conductive, insulating, or auxiliary molding material on a substrate by a method wherein a thin film of said material is formed on the substrate including a slope and the formed film is all removed by anisotropic etching but in a region that is a lower portion immediate to the slope. CONSTITUTION:A thick field insulating film 7 is formed along the periphery of an Si substrate 6 and the part surrounded by the film 7 is covered by a thin gate insulating film 8. Next, the lamination is totally covered by a PSG layer 10 and a part thereof extending from the bank of the film 7 toward the gate formation region 9 is removed. A polycrystalline Si layer is then grown to cover the entire surface and a miniature size polycrystalline Si layer 11 is formed by sputter etching adjacent to the end of the layer 10 remaining in the gate formation region 9. The remaining layer 10 is etched away so that only a miniature size, cubic polycrystalline Si layer 11' remains on the film 8. A gate electrode with a side as short as 0.5mum is thus obtained without need for positioning efforts.
JP18791180A 1980-12-29 1980-12-29 Manufacture of semiconductor device Pending JPS57112028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18791180A JPS57112028A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18791180A JPS57112028A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112028A true JPS57112028A (en) 1982-07-12

Family

ID=16214356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18791180A Pending JPS57112028A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112028A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199221A (en) * 1981-06-02 1982-12-07 Toshiba Corp Manufacture of semiconductor device
JPS60194570A (en) * 1984-03-16 1985-10-03 Toshiba Corp Manufacture of semiconductor device
JPS6144470A (en) * 1984-05-15 1986-03-04 Digital Equipment Corp Method of producing integrated circuit chip
JPS6194368A (en) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS62263657A (en) * 1986-05-10 1987-11-16 Sony Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444477A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5444481A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444477A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
JPS5444481A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199221A (en) * 1981-06-02 1982-12-07 Toshiba Corp Manufacture of semiconductor device
JPH0437580B2 (en) * 1981-06-02 1992-06-19 Tokyo Shibaura Electric Co
JPS60194570A (en) * 1984-03-16 1985-10-03 Toshiba Corp Manufacture of semiconductor device
JPS6144470A (en) * 1984-05-15 1986-03-04 Digital Equipment Corp Method of producing integrated circuit chip
JPH0569292B2 (en) * 1984-05-15 1993-09-30 Digital Equipment Corp
JPS6194368A (en) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS62263657A (en) * 1986-05-10 1987-11-16 Sony Corp Manufacture of semiconductor device
JPH0779104B2 (en) * 1986-05-10 1995-08-23 ソニー株式会社 Method for manufacturing semiconductor device

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