JPS5513904A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS5513904A JPS5513904A JP8609578A JP8609578A JPS5513904A JP S5513904 A JPS5513904 A JP S5513904A JP 8609578 A JP8609578 A JP 8609578A JP 8609578 A JP8609578 A JP 8609578A JP S5513904 A JPS5513904 A JP S5513904A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- substrate
- concave portion
- sio
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve an integrating rate and a reliability of the wiring by forming flat the separated insulation layer interposed between the elements by a bias spattering method.
CONSTITUTION: A concave portion 3 with a steep side face is slectively formed on a substrate 1 by an ion milling method and others and is covered with thin SiO2 film 4 to bury an insulator into the concave portion 3 by a bias spattering method. The element is formed in a region 6 by utilizing an appropriate mask. In this case, SiO2, Si3N4, alumina and others are used for the insulator. According to such a method, the surface of the substrate can be formed flat, the fine working to the element be easily established and further the disconnection of the wires by prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513904A true JPS5513904A (en) | 1980-01-31 |
| JPS6255700B2 JPS6255700B2 (en) | 1987-11-20 |
Family
ID=13877141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8609578A Granted JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513904A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193044A (en) * | 1981-05-08 | 1982-11-27 | Fairchild Camera Instr Co | Method of producing non-invasion type planar insulating region in integrated circuit structure |
| JPS583248A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Manufacture of bipolar semiconductor device |
| JPS6070741A (en) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | Interelement isolation |
| JPS6294955A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Element isolation |
| JPWO2007000808A1 (en) * | 2005-06-28 | 2009-01-22 | スパンション エルエルシー | Semiconductor device and manufacturing method thereof |
-
1978
- 1978-07-17 JP JP8609578A patent/JPS5513904A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193044A (en) * | 1981-05-08 | 1982-11-27 | Fairchild Camera Instr Co | Method of producing non-invasion type planar insulating region in integrated circuit structure |
| JPS583248A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Manufacture of bipolar semiconductor device |
| JPS6070741A (en) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | Interelement isolation |
| JPS6294955A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Element isolation |
| JPH0531825B2 (en) * | 1985-10-21 | 1993-05-13 | Nippon Electric Co | |
| JPWO2007000808A1 (en) * | 2005-06-28 | 2009-01-22 | スパンション エルエルシー | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6255700B2 (en) | 1987-11-20 |
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