JPS56129337A - Insulative separation structure for semiconductor monolithic integrated circuit - Google Patents

Insulative separation structure for semiconductor monolithic integrated circuit

Info

Publication number
JPS56129337A
JPS56129337A JP3196580A JP3196580A JPS56129337A JP S56129337 A JPS56129337 A JP S56129337A JP 3196580 A JP3196580 A JP 3196580A JP 3196580 A JP3196580 A JP 3196580A JP S56129337 A JPS56129337 A JP S56129337A
Authority
JP
Japan
Prior art keywords
insulative
epitaxial layer
film
substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3196580A
Other languages
Japanese (ja)
Inventor
Isamu Miyagi
Shigehisa Wakamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3196580A priority Critical patent/JPS56129337A/en
Publication of JPS56129337A publication Critical patent/JPS56129337A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To separate the elements from each other by a structure wherein an insulative film is covered on the side surface of islands in the form of an epitaxial layer on a substrate and also on the upper surface of the substrate not in contact with the islands, then an insulative film with low melting temperature is superimposed thereon, and finally a part of the insulative film is buried under the surface of the epitaxial layer. CONSTITUTION:An N epitaxial layer 11 on the surface of a P type Si substrate including an N<+> buried layer 10 is plasma-etched after applying a regist mask 13. With the regist mask 13 having been removed, an SiO2 film 14 is formed through wet oxidation and PSG15 containing P at least 5mol% is superimposed thereon. The surface thereof is smoothed by the processing made at about 1,000 deg.C and in N2 and the SiO2 film 14 is exposed through the uniform etching. Thereafter, P base 16 and N emitter 17 are formed and then Al wiring 18 is applied according to the normal techniques. With this arrangement, insulative separation layers can be obtained at the conditions where the generation or growth of crystal defects are neglible, and it becomes also possible to obtain the monolithic IC with the improved accuracy of photograph etching and the improved degree of integration.
JP3196580A 1980-03-13 1980-03-13 Insulative separation structure for semiconductor monolithic integrated circuit Pending JPS56129337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3196580A JPS56129337A (en) 1980-03-13 1980-03-13 Insulative separation structure for semiconductor monolithic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3196580A JPS56129337A (en) 1980-03-13 1980-03-13 Insulative separation structure for semiconductor monolithic integrated circuit

Publications (1)

Publication Number Publication Date
JPS56129337A true JPS56129337A (en) 1981-10-09

Family

ID=12345660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3196580A Pending JPS56129337A (en) 1980-03-13 1980-03-13 Insulative separation structure for semiconductor monolithic integrated circuit

Country Status (1)

Country Link
JP (1) JPS56129337A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929438A (en) * 1982-08-11 1984-02-16 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59172246A (en) * 1983-03-18 1984-09-28 Seiko Instr & Electronics Ltd Recessed-section isolated semiconductor device and manufacture thereof
JPS61107739A (en) * 1984-10-30 1986-05-26 Nec Corp Semiconductor device with strengthened radioactive ray stability
JPS61183940A (en) * 1985-02-08 1986-08-16 Toshiba Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929438A (en) * 1982-08-11 1984-02-16 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59172246A (en) * 1983-03-18 1984-09-28 Seiko Instr & Electronics Ltd Recessed-section isolated semiconductor device and manufacture thereof
JPS61107739A (en) * 1984-10-30 1986-05-26 Nec Corp Semiconductor device with strengthened radioactive ray stability
JPS61183940A (en) * 1985-02-08 1986-08-16 Toshiba Corp Manufacture of semiconductor device

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