JPS5522863A - Manufacturing method for semiconductor device - Google Patents

Manufacturing method for semiconductor device

Info

Publication number
JPS5522863A
JPS5522863A JP9645178A JP9645178A JPS5522863A JP S5522863 A JPS5522863 A JP S5522863A JP 9645178 A JP9645178 A JP 9645178A JP 9645178 A JP9645178 A JP 9645178A JP S5522863 A JPS5522863 A JP S5522863A
Authority
JP
Japan
Prior art keywords
film
sio
pressure
processing
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9645178A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9645178A priority Critical patent/JPS5522863A/en
Publication of JPS5522863A publication Critical patent/JPS5522863A/en
Pending legal-status Critical Current

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  • Electronic Switches (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain an insulation film having a high density with a reduced defect density by establishing a heat treatment for Si3N4 film in the O2 atmosphere.
CONSTITUTION: A Si3N4 film is processed in the O2 atmosphere over 10 atmospheric pressure at 300 to 800°C. An O2 pressure, processing temperature and treatment time can not be dtetermined in associated sense, but the treatment time is too long the temperature under 300°C and a pn-junction is suffered from an undesirable affection over 800°C. Concerned with the O2 pressure, a heat treatment temperature is reduced to easily bond O to Si, a high pressure is used for shortening the processing time, and practically it would be set over 10 atmospheric pressure. The SiO2 film formed on the surface by such a processing is obtained by replacing N of the SiO2 film with O, the both elements have a definite boundary and the intermediate layer of SiOxNy exists. Further, a dense film is formed by bonding with Si by a remarkable entering of O2 to the defect or pin- hole in the SiOxNy. Therefore, a stable insulation film can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP9645178A 1978-08-07 1978-08-07 Manufacturing method for semiconductor device Pending JPS5522863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9645178A JPS5522863A (en) 1978-08-07 1978-08-07 Manufacturing method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9645178A JPS5522863A (en) 1978-08-07 1978-08-07 Manufacturing method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5522863A true JPS5522863A (en) 1980-02-18

Family

ID=14165374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9645178A Pending JPS5522863A (en) 1978-08-07 1978-08-07 Manufacturing method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522863A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814537A (en) * 1981-07-17 1983-01-27 Nec Corp Manufacture of semiconductor device
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPS62194631A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device
US5013692A (en) * 1988-12-08 1991-05-07 Sharp Kabushiki Kaisha Process for preparing a silicon nitride insulating film for semiconductor memory device
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US6291366B1 (en) * 1994-08-15 2001-09-18 Sony Corporation Process of manufacturing semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1968 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814537A (en) * 1981-07-17 1983-01-27 Nec Corp Manufacture of semiconductor device
JPS6351375B2 (en) * 1981-07-17 1988-10-13 Nippon Electric Co
JPS58118273A (en) * 1982-01-06 1983-07-14 Hitachi Ltd Heat-sensitive recording head
JPH0232988B2 (en) * 1982-01-06 1990-07-24 Hitachi Ltd
JPS62194631A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device
US5013692A (en) * 1988-12-08 1991-05-07 Sharp Kabushiki Kaisha Process for preparing a silicon nitride insulating film for semiconductor memory device
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US6291366B1 (en) * 1994-08-15 2001-09-18 Sony Corporation Process of manufacturing semiconductor devices
US6458715B2 (en) 1994-08-15 2002-10-01 Sony Corporation Process of manufacturing semiconductor device

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