JPS5227391A - Contact forming method of semiconductor device - Google Patents

Contact forming method of semiconductor device

Info

Publication number
JPS5227391A
JPS5227391A JP10303375A JP10303375A JPS5227391A JP S5227391 A JPS5227391 A JP S5227391A JP 10303375 A JP10303375 A JP 10303375A JP 10303375 A JP10303375 A JP 10303375A JP S5227391 A JPS5227391 A JP S5227391A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming method
contact forming
wiring
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10303375A
Other languages
Japanese (ja)
Other versions
JPS5731659B2 (en
Inventor
Tadao Kachi
Yoshio Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10303375A priority Critical patent/JPS5227391A/en
Publication of JPS5227391A publication Critical patent/JPS5227391A/en
Publication of JPS5731659B2 publication Critical patent/JPS5731659B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: In the contact formation between element and wiring of semiconductor substrate or between upper layer and lower layer wiring of multi-layer wiring, the alignment margin is made nearly zero. In this way, wiring density can be increased.
COPYRIGHT: (C)1977,JPO&Japio
JP10303375A 1975-08-27 1975-08-27 Contact forming method of semiconductor device Granted JPS5227391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10303375A JPS5227391A (en) 1975-08-27 1975-08-27 Contact forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10303375A JPS5227391A (en) 1975-08-27 1975-08-27 Contact forming method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5227391A true JPS5227391A (en) 1977-03-01
JPS5731659B2 JPS5731659B2 (en) 1982-07-06

Family

ID=14343334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10303375A Granted JPS5227391A (en) 1975-08-27 1975-08-27 Contact forming method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5227391A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049972A (en) * 1988-01-29 1991-09-17 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US5223454A (en) * 1988-01-29 1993-06-29 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
JPH07161662A (en) * 1993-12-08 1995-06-23 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049972A (en) * 1988-01-29 1991-09-17 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US5223454A (en) * 1988-01-29 1993-06-29 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
JPH07161662A (en) * 1993-12-08 1995-06-23 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5731659B2 (en) 1982-07-06

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