JPS5516464A - Method of forming wafer for semiconductor device - Google Patents

Method of forming wafer for semiconductor device

Info

Publication number
JPS5516464A
JPS5516464A JP8957178A JP8957178A JPS5516464A JP S5516464 A JPS5516464 A JP S5516464A JP 8957178 A JP8957178 A JP 8957178A JP 8957178 A JP8957178 A JP 8957178A JP S5516464 A JPS5516464 A JP S5516464A
Authority
JP
Japan
Prior art keywords
silicon
layer
substrate
forming
glass layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8957178A
Inventor
Masao Iwamura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP8957178A priority Critical patent/JPS5516464A/en
Publication of JPS5516464A publication Critical patent/JPS5516464A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a semiconductor crystal layer of a desired thickness at a high accuracy on an insulating body, by forming on two silicon substrate a silicon layer and a glass layer, respectively, bonding these substrates and subjecting the same to a processing.
CONSTITUTION: A monocrystal N type silicon layer 3, oxidated film 5 and a phosphorous glass layer 6 on the major surface of a P-type silicon substrate 1. A silicon oxidated film 8 and, then, a phosphorous glass layer 9 are formed on a separately prepared silicon substrate 7. These two silicon substrates are heat-bonded to each other with the phosphorous glass layers 6, 9 opposing to and contacting with each other. Subsequently, the substrate 1 is subjected to treatment for forming a porous structure, and the porous substrate 1 is then removed after conversion to an oxide.
COPYRIGHT: (C)1980,JPO&Japio
JP8957178A 1978-07-21 1978-07-21 Method of forming wafer for semiconductor device Pending JPS5516464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8957178A JPS5516464A (en) 1978-07-21 1978-07-21 Method of forming wafer for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8957178A JPS5516464A (en) 1978-07-21 1978-07-21 Method of forming wafer for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5516464A true JPS5516464A (en) 1980-02-05

Family

ID=13974483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8957178A Pending JPS5516464A (en) 1978-07-21 1978-07-21 Method of forming wafer for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5516464A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0469630A2 (en) * 1990-08-03 1992-02-05 Canon Kabushiki Kaisha Semiconductor body and process for preparing said semiconductor body
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
EP0530972A2 (en) * 1991-08-02 1993-03-10 Canon Kabushiki Kaisha Liquid crystal image display unit
EP0536788A1 (en) * 1991-10-11 1993-04-14 Canon Kabushiki Kaisha Method of producing semiconductor substrate
EP0553775A1 (en) * 1992-01-28 1993-08-04 Canon Kabushiki Kaisha Semiconductor device and manufacturing method of same
EP0553859A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for producing the same
EP0553860A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for preparing the same
US5374329A (en) * 1992-01-31 1994-12-20 Canon Kabushiki Kaisha Process for producing a semiconductor wafer
US5439843A (en) * 1992-01-31 1995-08-08 Canon Kabushiki Kaisha Method for preparing a semiconductor substrate using porous silicon
US5466631A (en) * 1991-10-11 1995-11-14 Canon Kabushiki Kaisha Method for producing semiconductor articles
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
US5840616A (en) * 1991-05-22 1998-11-24 Canon Kabushiki Kaisha Method for preparing semiconductor member
EP1251556A1 (en) 1992-01-30 2002-10-23 Canon Kabushiki Kaisha Process for producing semiconductor substrate

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
EP0469630A2 (en) * 1990-08-03 1992-02-05 Canon Kabushiki Kaisha Semiconductor body and process for preparing said semiconductor body
EP0469630A3 (en) * 1990-08-03 1994-11-23 Canon Kk Semiconductor body and process for preparing said semiconductor body
US6150031A (en) * 1990-08-03 2000-11-21 Canon Kabushiki Kaisha Semiconductor member and process for preparing semiconductor member
EP0747935A2 (en) * 1990-08-03 1996-12-11 Canon Kabushiki Kaisha Process for preparing an SOI-member
US5750000A (en) * 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
EP0747935A3 (en) * 1990-08-03 1997-10-01 Canon Kk Process for preparing an SOI-member
US5371037A (en) * 1990-08-03 1994-12-06 Canon Kabushiki Kaisha Semiconductor member and process for preparing semiconductor member
US5840616A (en) * 1991-05-22 1998-11-24 Canon Kabushiki Kaisha Method for preparing semiconductor member
US5827755A (en) * 1991-08-02 1998-10-27 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
EP0530972A2 (en) * 1991-08-02 1993-03-10 Canon Kabushiki Kaisha Liquid crystal image display unit
US5530266A (en) * 1991-08-02 1996-06-25 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
US5250460A (en) * 1991-10-11 1993-10-05 Canon Kabushiki Kaisha Method of producing semiconductor substrate
EP0536788A1 (en) * 1991-10-11 1993-04-14 Canon Kabushiki Kaisha Method of producing semiconductor substrate
US5466631A (en) * 1991-10-11 1995-11-14 Canon Kabushiki Kaisha Method for producing semiconductor articles
EP0553775A1 (en) * 1992-01-28 1993-08-04 Canon Kabushiki Kaisha Semiconductor device and manufacturing method of same
EP1251556A1 (en) 1992-01-30 2002-10-23 Canon Kabushiki Kaisha Process for producing semiconductor substrate
US5670411A (en) * 1992-01-31 1997-09-23 Canon Kabushiki Kaisha Process of making semiconductor-on-insulator substrate
EP0553859A3 (en) * 1992-01-31 1997-09-10 Canon Kk Semiconductor substrate and process for producing the same
EP0553860A3 (en) * 1992-01-31 1997-09-10 Canon Kk Semiconductor substrate and process for preparing the same
EP0553859A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for producing the same
US5374329A (en) * 1992-01-31 1994-12-20 Canon Kabushiki Kaisha Process for producing a semiconductor wafer
US5439843A (en) * 1992-01-31 1995-08-08 Canon Kabushiki Kaisha Method for preparing a semiconductor substrate using porous silicon
US6309945B1 (en) 1992-01-31 2001-10-30 Canon Kabushiki Kaisha Process for producing semiconductor substrate of SOI structure
US6468663B1 (en) 1992-01-31 2002-10-22 Canon Kabushiki Kaisha Semiconductor substrate and process for producing the same
EP0553860A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Semiconductor substrate and process for preparing the same

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