JPS556891A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS556891A JPS556891A JP7917979A JP7917979A JPS556891A JP S556891 A JPS556891 A JP S556891A JP 7917979 A JP7917979 A JP 7917979A JP 7917979 A JP7917979 A JP 7917979A JP S556891 A JPS556891 A JP S556891A
- Authority
- JP
- Japan
- Prior art keywords
- conductive type
- semiconductor
- range
- semiconductor device
- indentation portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain this semiconductor device that has high resisting pressure and the great degree of integration, by embedding one portion of an EP layer onto a substrate by utilizing anisotropic etching technique.
CONSTITUTION: This semiconductor device is produced by forming the second conductive type semiconductor layer 15 with an indentation portion 13' on the second conductive type first high impurities concentration range 14 made up to an indentation portion 13 of the first conductive type semiconductor substrate 11 by epitaxial growth, by etching its surface and by building up an isolation range 19 reaching the substrate 11. In this case, the first conductive type semiconductor range 16 is formed by introducing the first conductive type impurities to the semiconductor region 15 prior to etching, and the second conductive type semiconductor region 15 is etched in such a manner that the semiconductor range 16 of the outside of the indentation portion 13' is removed leaving a semiconductor range 16a of a bottom of the indentation portion 13'. Thus, this semiconductor device that has high resisting pressure and the great degree of integration can be made up.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7917979A JPS556891A (en) | 1979-06-25 | 1979-06-25 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7917979A JPS556891A (en) | 1979-06-25 | 1979-06-25 | Manufacturing method of semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50145041A Division JPS5269587A (en) | 1975-12-08 | 1975-12-08 | Device and manufacture for high voltage resisting semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS556891A true JPS556891A (en) | 1980-01-18 |
Family
ID=13682743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7917979A Pending JPS556891A (en) | 1979-06-25 | 1979-06-25 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS556891A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115258U (en) * | 1981-01-10 | 1982-07-16 |
-
1979
- 1979-06-25 JP JP7917979A patent/JPS556891A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115258U (en) * | 1981-01-10 | 1982-07-16 |
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