JPS649639A - Manufacture of insulating film for element isolation of semiconductor device - Google Patents

Manufacture of insulating film for element isolation of semiconductor device

Info

Publication number
JPS649639A
JPS649639A JP16603687A JP16603687A JPS649639A JP S649639 A JPS649639 A JP S649639A JP 16603687 A JP16603687 A JP 16603687A JP 16603687 A JP16603687 A JP 16603687A JP S649639 A JPS649639 A JP S649639A
Authority
JP
Japan
Prior art keywords
silicon
oxide film
element isolation
mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16603687A
Other languages
Japanese (ja)
Inventor
Takuya Managa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP16603687A priority Critical patent/JPS649639A/en
Publication of JPS649639A publication Critical patent/JPS649639A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce a step between an insulating film for element isolation and a silicon substrate and to improve the reliability of a wiring formed thereon, by forming a silicon oxide film to the height of the original surface of the silicon substrate by a selective oxidation method with a silicon nitride film as a mask. CONSTITUTION:With a silicon nitride film 2 as a mask, a silicon oxide film 3, which is formed in the Figure 1, is etched away. The etching is performed until a silicon substrate 1 is completely exposed. Then, with the silicon nitride film 2 as a mask, selective oxidation is performed again by a thermal oxidation method, and a silicon oxide film 4 is formed. The thickness of the formed silicon oxide film 4 is set so that the height of the surface of the silicon oxide film 4 becomes the height of the original surface of the silicon substrate 1, i.e., the height of the boundary between the silicon substrate 1 and the silicon nitride 2. Thereafter, when the silicon nitride film 2, which is used as a mask, is removed, a flat insulating film for element isolation is formed.
JP16603687A 1987-07-01 1987-07-01 Manufacture of insulating film for element isolation of semiconductor device Pending JPS649639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16603687A JPS649639A (en) 1987-07-01 1987-07-01 Manufacture of insulating film for element isolation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16603687A JPS649639A (en) 1987-07-01 1987-07-01 Manufacture of insulating film for element isolation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS649639A true JPS649639A (en) 1989-01-12

Family

ID=15823759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16603687A Pending JPS649639A (en) 1987-07-01 1987-07-01 Manufacture of insulating film for element isolation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS649639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401529B1 (en) * 1996-06-03 2003-12-31 주식회사 하이닉스반도체 Method for forming field oxide layer of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401529B1 (en) * 1996-06-03 2003-12-31 주식회사 하이닉스반도체 Method for forming field oxide layer of semiconductor device

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