JPS6450560A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6450560A JPS6450560A JP62208513A JP20851387A JPS6450560A JP S6450560 A JPS6450560 A JP S6450560A JP 62208513 A JP62208513 A JP 62208513A JP 20851387 A JP20851387 A JP 20851387A JP S6450560 A JPS6450560 A JP S6450560A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- crystal layer
- junction
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To obtain a flat photoresist film for formation of a metal bump as well as to form an anodic oxide film or an anodic sulfide film on the sidewall part of a mesa using a simple process by a method wherein, before the performance of mesa etching, a flat metal film to be used for a bump is formed in advance on the substrate having a P-N junction. CONSTITUTION:After a semiconductor crystal layer 23, having the conductive type opposite to that of a substrate or the crystal layer 22 on the substrate, has been formed on a compound semiconductor substrate 21 or on the semiconductor crystal layer 22 formed on the substrate 21, a metal film 24 to be used for a bump is formed on the substrate. Then, the photoresist film 25 of a prescribed pattern is formed on the metal film 24, and the substrate or the crystal layer 22 is mesaetched until a P-N junction part 26 is exposed using said photoresist film as a mask. Subsequently, a protective film 27 is formed on the part other than the above-mentioned P-N junction exposed part 26', and after an anodic oxide film or an anodic sulfide film 28 has been formed on the exposed P-N junction part 26 ' using the protective film 27 as a mask, the unnecessary protective film 27 formed on the metal film 24 is removed. The above-mentioned protective film 27 is formed by conducting ECR-plasma CVD method, for example.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208513A JPS6450560A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208513A JPS6450560A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450560A true JPS6450560A (en) | 1989-02-27 |
Family
ID=16557408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208513A Pending JPS6450560A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450560A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11287862A (en) * | 1998-02-09 | 1999-10-19 | Sharp Corp | Two-dimensional image detector and its manufacture |
-
1987
- 1987-08-21 JP JP62208513A patent/JPS6450560A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11287862A (en) * | 1998-02-09 | 1999-10-19 | Sharp Corp | Two-dimensional image detector and its manufacture |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0087312A3 (en) | Formation of regions of different conductivity types in a substrate | |
| JPS6450560A (en) | Manufacture of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS57100719A (en) | Manufacture of semiconductor device | |
| JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
| JPS543470A (en) | Etching method | |
| JPS5797629A (en) | Manufacture of semiconductor device | |
| JPS5415669A (en) | Manufacture of mesa-type semiconductor device | |
| JPS5633841A (en) | Manufacture of semiconductor device | |
| JPS5743431A (en) | Manufacture of semiconductor device | |
| JPS54162484A (en) | Manufacture of semiconductor device | |
| JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution | |
| JPS54131873A (en) | Manufacture of semiconductor device | |
| JPS52155055A (en) | Production of semiconductor device | |
| JPS57128927A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5678141A (en) | Method of forming electrode for semiconductor device | |
| JPS57124443A (en) | Forming method for electrode layer | |
| JPS649639A (en) | Manufacture of insulating film for element isolation of semiconductor device | |
| JPS55145344A (en) | Mthod for surface profile processing of 3-5 group compound semiconductor | |
| JPS5493971A (en) | Production of semiconductor device | |
| JPS5752130A (en) | Forming method for electrode | |
| JPS5434766A (en) | Manufacture of semiconductor device | |
| JPS5518057A (en) | Semiconductor device and fabricating method of the same |