JPS5493971A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5493971A
JPS5493971A JP62578A JP62578A JPS5493971A JP S5493971 A JPS5493971 A JP S5493971A JP 62578 A JP62578 A JP 62578A JP 62578 A JP62578 A JP 62578A JP S5493971 A JPS5493971 A JP S5493971A
Authority
JP
Japan
Prior art keywords
photo resistor
resistor pattern
lift
metal
adhere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62578A
Other languages
Japanese (ja)
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP62578A priority Critical patent/JPS5493971A/en
Publication of JPS5493971A publication Critical patent/JPS5493971A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To prevent ohmic contact forming defects in the next lift-off process by burying metal into a contact aperture part in the process where a metallic wiring pattern of an integrated circuit is formed by the lift-off method.
CONSTITUTION: A photo resistor pattern is formed on insulating film 2 and is used as a mask to form diffusion layer 3, which will be brought into ohmic contact with a metallic wiring layer, in semiconductor substrate 1. The photo resistor pattern above is left as it is, and metal 5 is caused to adhere to all the surface, and the photo resistor pattern is removed. Next, photo resistor pattern 6 is formed by the lift-off method, and metal is caused to adhere to all the surface, and photo resistor pattern 6 is removed.
COPYRIGHT: (C)1979,JPO&Japio
JP62578A 1978-01-06 1978-01-06 Production of semiconductor device Pending JPS5493971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62578A JPS5493971A (en) 1978-01-06 1978-01-06 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62578A JPS5493971A (en) 1978-01-06 1978-01-06 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5493971A true JPS5493971A (en) 1979-07-25

Family

ID=11478902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62578A Pending JPS5493971A (en) 1978-01-06 1978-01-06 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5493971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153447A (en) * 1981-03-17 1982-09-22 Nec Corp Forming method for multilayer wiring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153447A (en) * 1981-03-17 1982-09-22 Nec Corp Forming method for multilayer wiring

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