JPS559415A - Semiconductor manufacturing method - Google Patents
Semiconductor manufacturing methodInfo
- Publication number
- JPS559415A JPS559415A JP8154978A JP8154978A JPS559415A JP S559415 A JPS559415 A JP S559415A JP 8154978 A JP8154978 A JP 8154978A JP 8154978 A JP8154978 A JP 8154978A JP S559415 A JPS559415 A JP S559415A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- opening
- metallic
- nitrified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent breakage of a wiring in the second layer without fail by forming an overhang at an opening in an insulation film, and by patterning a metallic wiring film by means of the lift-off method.
CONSTITUTION: A semiconductor substrate 1 in which required elements are formed, is covered with an oxidized Si film 2. A nitrified Si film 3 is laid on the film 2. Then an opening is formed at where a contact hole is made in the film 3. A high density phosphorous silicate glass film 4 and a nitrified Si film 5 are laid. The film 5 is selectively etched before the film 4 is etched by the use of the remaining film 5 being used as a mask. By this etching, an opening that has overhang is formed. Then metallic films 61 to 63 are evaporated. In this case the evaporationg is done obliquely from the top so that the edge of the metallic film 6 has a mild slope. Then an unnecessary film 63 is removed by eliminating the film 4, and patterning is done by, so to speak, the lift-off method. As a result, breakage of a wiring in the second layer which is to be formed later, is prevented without fail.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154978A JPS559415A (en) | 1978-07-05 | 1978-07-05 | Semiconductor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154978A JPS559415A (en) | 1978-07-05 | 1978-07-05 | Semiconductor manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS559415A true JPS559415A (en) | 1980-01-23 |
Family
ID=13749367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8154978A Pending JPS559415A (en) | 1978-07-05 | 1978-07-05 | Semiconductor manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS559415A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6247150A (en) * | 1985-08-26 | 1987-02-28 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPH04229625A (en) * | 1990-04-30 | 1992-08-19 | American Teleph & Telegr Co <Att> | Manufacture of semiconductor device |
US7677696B2 (en) | 2004-03-31 | 2010-03-16 | Canon Kabushiki Kaisha | Liquid discharge head |
-
1978
- 1978-07-05 JP JP8154978A patent/JPS559415A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6247150A (en) * | 1985-08-26 | 1987-02-28 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPH04229625A (en) * | 1990-04-30 | 1992-08-19 | American Teleph & Telegr Co <Att> | Manufacture of semiconductor device |
US7677696B2 (en) | 2004-03-31 | 2010-03-16 | Canon Kabushiki Kaisha | Liquid discharge head |
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