JPS559415A - Semiconductor manufacturing method - Google Patents

Semiconductor manufacturing method

Info

Publication number
JPS559415A
JPS559415A JP8154978A JP8154978A JPS559415A JP S559415 A JPS559415 A JP S559415A JP 8154978 A JP8154978 A JP 8154978A JP 8154978 A JP8154978 A JP 8154978A JP S559415 A JPS559415 A JP S559415A
Authority
JP
Japan
Prior art keywords
film
wiring
opening
metallic
nitrified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8154978A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8154978A priority Critical patent/JPS559415A/en
Publication of JPS559415A publication Critical patent/JPS559415A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent breakage of a wiring in the second layer without fail by forming an overhang at an opening in an insulation film, and by patterning a metallic wiring film by means of the lift-off method.
CONSTITUTION: A semiconductor substrate 1 in which required elements are formed, is covered with an oxidized Si film 2. A nitrified Si film 3 is laid on the film 2. Then an opening is formed at where a contact hole is made in the film 3. A high density phosphorous silicate glass film 4 and a nitrified Si film 5 are laid. The film 5 is selectively etched before the film 4 is etched by the use of the remaining film 5 being used as a mask. By this etching, an opening that has overhang is formed. Then metallic films 61 to 63 are evaporated. In this case the evaporationg is done obliquely from the top so that the edge of the metallic film 6 has a mild slope. Then an unnecessary film 63 is removed by eliminating the film 4, and patterning is done by, so to speak, the lift-off method. As a result, breakage of a wiring in the second layer which is to be formed later, is prevented without fail.
COPYRIGHT: (C)1980,JPO&Japio
JP8154978A 1978-07-05 1978-07-05 Semiconductor manufacturing method Pending JPS559415A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8154978A JPS559415A (en) 1978-07-05 1978-07-05 Semiconductor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8154978A JPS559415A (en) 1978-07-05 1978-07-05 Semiconductor manufacturing method

Publications (1)

Publication Number Publication Date
JPS559415A true JPS559415A (en) 1980-01-23

Family

ID=13749367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8154978A Pending JPS559415A (en) 1978-07-05 1978-07-05 Semiconductor manufacturing method

Country Status (1)

Country Link
JP (1) JPS559415A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247150A (en) * 1985-08-26 1987-02-28 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPH04229625A (en) * 1990-04-30 1992-08-19 American Teleph & Telegr Co <Att> Manufacture of semiconductor device
US7677696B2 (en) 2004-03-31 2010-03-16 Canon Kabushiki Kaisha Liquid discharge head

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247150A (en) * 1985-08-26 1987-02-28 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPH04229625A (en) * 1990-04-30 1992-08-19 American Teleph & Telegr Co <Att> Manufacture of semiconductor device
US7677696B2 (en) 2004-03-31 2010-03-16 Canon Kabushiki Kaisha Liquid discharge head

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