JPS5766651A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5766651A JPS5766651A JP14162780A JP14162780A JPS5766651A JP S5766651 A JPS5766651 A JP S5766651A JP 14162780 A JP14162780 A JP 14162780A JP 14162780 A JP14162780 A JP 14162780A JP S5766651 A JPS5766651 A JP S5766651A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- heating
- etched
- slope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form a gentle slope to the internal peripheral surface of a piercing hole to prevent disconnection of a wiring layer by treating with heating and melting an insulating layer formed on a substrate. CONSTITUTION:An insulating film 12, a wiring layer 13 and a PSG layer 14 are formed on a silicon substrate 11, and the layer 14 is etched taking a photoresist layer 15 as a mask. Then, after the layer 15 is removed, the layer 14 is melted with heating. At this time, a slope of an edge part of the opening of the piercing hole 16 becomes gentle. Next, the layer 14 is etched to allow the layer 13 to be exposed. Then, a wiring pattern 17 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14162780A JPS5766651A (en) | 1980-10-09 | 1980-10-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14162780A JPS5766651A (en) | 1980-10-09 | 1980-10-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5766651A true JPS5766651A (en) | 1982-04-22 |
Family
ID=15296431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14162780A Pending JPS5766651A (en) | 1980-10-09 | 1980-10-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766651A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948743A (en) * | 1988-06-29 | 1990-08-14 | Matsushita Electronics Corporation | Method of manufacturing a semiconductor device |
US5399532A (en) * | 1991-05-30 | 1995-03-21 | At&T Corp. | Integrated circuit window etch and planarization |
US5552342A (en) * | 1993-08-20 | 1996-09-03 | Nippondenso Co., Ltd. | Method for producing a contact hole in a semiconductor device using reflow and etch |
-
1980
- 1980-10-09 JP JP14162780A patent/JPS5766651A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948743A (en) * | 1988-06-29 | 1990-08-14 | Matsushita Electronics Corporation | Method of manufacturing a semiconductor device |
US5399532A (en) * | 1991-05-30 | 1995-03-21 | At&T Corp. | Integrated circuit window etch and planarization |
US5552342A (en) * | 1993-08-20 | 1996-09-03 | Nippondenso Co., Ltd. | Method for producing a contact hole in a semiconductor device using reflow and etch |
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