JPS57102014A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57102014A JPS57102014A JP17841880A JP17841880A JPS57102014A JP S57102014 A JPS57102014 A JP S57102014A JP 17841880 A JP17841880 A JP 17841880A JP 17841880 A JP17841880 A JP 17841880A JP S57102014 A JPS57102014 A JP S57102014A
- Authority
- JP
- Japan
- Prior art keywords
- difference
- level
- film
- hole
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Abstract
PURPOSE:To form a wiring without disconnection at a portion with difference in level by improving the forming means of a wiring connected to a conductive region through a contact hole. CONSTITUTION:After contact holes 301-303 are opened by selective etching of a CVD-SiO2 film 28, an Al-Si alloy film is formed leaving a resist pattern 29. Then resist films 321'-323' are formed on the holos 301-303 and the exposed alloy film 31 on the pattern 29 is removed by etching using the resist films 321'-323' as masks. Then alloy films 31' are left in the contact holes 301-303 which have steep inside walls opened by RIE method, so that difference in level of the hole can be reduced. After that the hole surface is covered by an Al film 33 and wirings 34-36 without discontinuity by difference in level can be formed to the holes 301-303 by patterning.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17841880A JPS57102014A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17841880A JPS57102014A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57102014A true JPS57102014A (en) | 1982-06-24 |
Family
ID=16048144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17841880A Pending JPS57102014A (en) | 1980-12-17 | 1980-12-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57102014A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59189678A (en) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
EP1033757A2 (en) * | 1999-02-04 | 2000-09-06 | Hitachi, Ltd. | Insulated gate bipolar transistor |
-
1980
- 1980-12-17 JP JP17841880A patent/JPS57102014A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59189678A (en) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPH0526334B2 (en) * | 1983-04-13 | 1993-04-15 | Fujitsu Ltd | |
EP1033757A2 (en) * | 1999-02-04 | 2000-09-06 | Hitachi, Ltd. | Insulated gate bipolar transistor |
EP1033757A3 (en) * | 1999-02-04 | 2002-03-06 | Hitachi, Ltd. | Insulated gate bipolar transistor |
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