JPS5575241A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5575241A JPS5575241A JP14945378A JP14945378A JPS5575241A JP S5575241 A JPS5575241 A JP S5575241A JP 14945378 A JP14945378 A JP 14945378A JP 14945378 A JP14945378 A JP 14945378A JP S5575241 A JPS5575241 A JP S5575241A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wires
- aluminum
- metallic
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To prevent stepwise disconnection of metallic wires of a semiconductor device by forming a metallic buried layer in advance in the connecting hole of a semiconductor by a photoetching process to thereby form a smooth surface thereon and forming the metallic wires thereon.
CONSTITUTION: An SiO2 film 107 is coated on the n+-type source and drains 105, 106 and gate electrode formed on a p--type substrate, and connecting holes 108 are opened in the layers 105 and 106 by a photoetching process. Then, an aluminum deposition film 109 and a resist film 110 are sequentially laminated thereon, the substarate is turned, an electron beam is irradiated obliquely thereto, the substrate is then developed, and the resist film 110' is thus retained in the recess of the film 110. The aluminum deposition film 109 is etched through the film 110' to thereby remove the resist film 110', and an aluminum buried layer 111 is formed in the hole 108 resulting in formation of the smooth surface thereof. When aluminum wires 112 connected to the layer 111 is then formed thereon by an aluminum deposition, stepwise disconnection of the wires is prevented. It is noted that the metallic buried material may also include polysilicon containing phosphorus (P), arsenic (As), etc.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14945378A JPS5575241A (en) | 1978-12-02 | 1978-12-02 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14945378A JPS5575241A (en) | 1978-12-02 | 1978-12-02 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575241A true JPS5575241A (en) | 1980-06-06 |
Family
ID=15475445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14945378A Pending JPS5575241A (en) | 1978-12-02 | 1978-12-02 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575241A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0951033A (en) * | 1984-05-15 | 1997-02-18 | Digital Equip Corp <Dec> | Preparation of integrated circuit chip |
-
1978
- 1978-12-02 JP JP14945378A patent/JPS5575241A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0951033A (en) * | 1984-05-15 | 1997-02-18 | Digital Equip Corp <Dec> | Preparation of integrated circuit chip |
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