JPS5575241A - Method of fabricating semiconductor device - Google Patents

Abstract

PURPOSE: To prevent stepwise disconnection of metallic wires of a semiconductor device by forming a metallic buried layer in advance in the connecting hole of a semiconductor by a photoetching process to thereby form a smooth surface thereon and forming the metallic wires thereon.

CONSTITUTION: An SiO₂ film 107 is coated on the n⁺-type source and drains 105, 106 and gate electrode formed on a p^--type substrate, and connecting holes 108 are opened in the layers 105 and 106 by a photoetching process. Then, an aluminum deposition film 109 and a resist film 110 are sequentially laminated thereon, the substarate is turned, an electron beam is irradiated obliquely thereto, the substrate is then developed, and the resist film 110' is thus retained in the recess of the film 110. The aluminum deposition film 109 is etched through the film 110' to thereby remove the resist film 110', and an aluminum buried layer 111 is formed in the hole 108 resulting in formation of the smooth surface thereof. When aluminum wires 112 connected to the layer 111 is then formed thereon by an aluminum deposition, stepwise disconnection of the wires is prevented. It is noted that the metallic buried material may also include polysilicon containing phosphorus (P), arsenic (As), etc.

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