JPS5796537A - Forming method for insulating film - Google Patents

Forming method for insulating film

Info

Publication number
JPS5796537A
JPS5796537A JP55173590A JP17359080A JPS5796537A JP S5796537 A JPS5796537 A JP S5796537A JP 55173590 A JP55173590 A JP 55173590A JP 17359080 A JP17359080 A JP 17359080A JP S5796537 A JPS5796537 A JP S5796537A
Authority
JP
Japan
Prior art keywords
layer
sio2
photo resist
poly
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173590A
Other languages
Japanese (ja)
Other versions
JPS6239819B2 (en
Inventor
Akira Takei
Hajime Kamioka
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55173590A priority Critical patent/JPS5796537A/en
Publication of JPS5796537A publication Critical patent/JPS5796537A/en
Publication of JPS6239819B2 publication Critical patent/JPS6239819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To deposit and form selectively an insulating layer on the side of a semiconductor layer by a method wherein one part of a macromolecular layer is subjected to an ashing treatment relatively thickly for a planar part of a semiconductor substrate and relatively thinly for a side part of said substrate, and the side of a semiconductor region is again expoed and subjected total plasma vapor growth. CONSTITUTION:A poly Si layer 3 obtained by patterning on an Si substrate 1 is formed via an SiO2 layer 2, and further on said layer 3 a photo resist layer 4 whose viscosity was adjusted to that higher than usual ones is applied. But for a step part of said layers 3 and 4 said layers are made to be communicated via a thin layer. Next, where the surface of a resist film 4 is ashed by a plasma asher, this ashing treatment proceeds isotropically, and a photo resist of side part of the poly Si layer 3 is removed, allowing a void an SiO2 layer 6 is deposited with a plasma CVD method. At this time, while an SiO2 layer is piled also on the photo resist layer, this layer is removed together with the photo resist. In case the SiO2 layer 6 is changed to a fine one by a heat treatment at 600- 800 deg.C for 30-40min, the SiO2 layer 6 having a good insulating property is formed on the side of the poly Si layer 3.
JP55173590A 1980-12-09 1980-12-09 Forming method for insulating film Granted JPS5796537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173590A JPS5796537A (en) 1980-12-09 1980-12-09 Forming method for insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173590A JPS5796537A (en) 1980-12-09 1980-12-09 Forming method for insulating film

Publications (2)

Publication Number Publication Date
JPS5796537A true JPS5796537A (en) 1982-06-15
JPS6239819B2 JPS6239819B2 (en) 1987-08-25

Family

ID=15963401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173590A Granted JPS5796537A (en) 1980-12-09 1980-12-09 Forming method for insulating film

Country Status (1)

Country Link
JP (1) JPS5796537A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242536A (en) * 1985-06-14 1987-02-24 ワトキンズ―ジョンソン　カンパニー Low-temperature chemical evaporation for silicon dioxide film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242536A (en) * 1985-06-14 1987-02-24 ワトキンズ―ジョンソン　カンパニー Low-temperature chemical evaporation for silicon dioxide film
JPH0732151B2 (en) * 1985-06-14 1995-04-10 フオ−カス セミコンダクタ システムズ，インコ−ポレイテツド Low temperature chemical vapor deposition of silicon dioxide film

Also Published As

Publication number Publication date
JPS6239819B2 (en) 1987-08-25

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