JPS5511352A - Insulated gate type field effect transistor and manufacture thereof - Google Patents

Insulated gate type field effect transistor and manufacture thereof

Info

Publication number
JPS5511352A
JPS5511352A JP8402478A JP8402478A JPS5511352A JP S5511352 A JPS5511352 A JP S5511352A JP 8402478 A JP8402478 A JP 8402478A JP 8402478 A JP8402478 A JP 8402478A JP S5511352 A JPS5511352 A JP S5511352A
Authority
JP
Japan
Prior art keywords
film
layer
sio
substrate
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8402478A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8402478A priority Critical patent/JPS5511352A/en
Publication of JPS5511352A publication Critical patent/JPS5511352A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: For preventing the dispersion in characteristic when forming electrode layers on one surface, to selectively oxidize the polycrystalline Si layer on a substrate, using the mask for determining the size of and distance between said electrode layers.
CONSTITUTION: Only the surface portion of a sapphire substrate 1 is changed into SiO2 film 3 by forming monocrystalline Si layer 2 in gaseous phase thereon, and the whole surface of said substrate 1 covered with Si3N4 film 4. Next, said substrate 1 is subjected to providing an opening in said films 3 and 4, etching, providing openings 6 in said layer 2 and filling said layer 2 with SiO2 film 7, removing said films 3 and 4, and depositing SiO2 gate film 8 on the whole surface thereof. Thereafter, said substrate 1 is subjected to providing openings 9 and 10 at the source drain formation range thereof, and forming polycrystalline Si layer 11, SiO2 film 12 and Si3N4 film 13 which serve as electrode on the whole surface thereof, and a resist film 14 with a given pattern further thereon. Next, N--type source drain ranges 15 and 16 are formed in said layer 2 with said film 14 used as mask, and said film 14 is removed with said films 12 and 13 left thereunder. Thereafter, the exposed portion of said polycrystalline layer 11 is changed into SiO2 layer with said films 12 and 13 used as mask.
COPYRIGHT: (C)1980,JPO&Japio
JP8402478A 1978-07-12 1978-07-12 Insulated gate type field effect transistor and manufacture thereof Pending JPS5511352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8402478A JPS5511352A (en) 1978-07-12 1978-07-12 Insulated gate type field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8402478A JPS5511352A (en) 1978-07-12 1978-07-12 Insulated gate type field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5511352A true JPS5511352A (en) 1980-01-26

Family

ID=13818985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8402478A Pending JPS5511352A (en) 1978-07-12 1978-07-12 Insulated gate type field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5511352A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283071A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283071A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device

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