JPS5533051A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5533051A
JPS5533051A JP10521178A JP10521178A JPS5533051A JP S5533051 A JPS5533051 A JP S5533051A JP 10521178 A JP10521178 A JP 10521178A JP 10521178 A JP10521178 A JP 10521178A JP S5533051 A JPS5533051 A JP S5533051A
Authority
JP
Japan
Prior art keywords
layer
type
opening
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10521178A
Other languages
Japanese (ja)
Other versions
JPS6122866B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10521178A priority Critical patent/JPS5533051A/en
Publication of JPS5533051A publication Critical patent/JPS5533051A/en
Publication of JPS6122866B2 publication Critical patent/JPS6122866B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To place the edge of a diffused layer as near to a semiconductor layer as possible, by producing the diffused layer in the opening of a buride insulating layer by self-alignment so that the diffeused layer is used as an emitter or gate.
CONSTITUTION: An SiO2 layer 2, which is used as the buried insulating layer, a P+-type polycrystalline silicon layer 3, another SiO2 layer 4 and an Si3N4 layer 9 are sequentially produced on an N-type silicon substrate 1. A photoresist film 10 having an opening 10a is coated on the layer 9. The film 10 is used as a mask to sequentially and partly remove the layers 9, 4, 32 by photoetching to expose the surface of the substrate 1. At that time, the opening of each layer is made larger than that of the resist 10 because of a side etching effect. The layer 9 is then used as mask to implant impurity ions to make an N+-type region 7. A P--type layer is epitaxially grown on the surface of the substrate 1. At that time, a P+-type layer 8 is produced near the opening of the layer 3. The layer 9 is thereafter used as a mask to produce an N-type region 6 by self-alignment. As a result, the region 6 and the layer 8 are located greatly near each other.
COPYRIGHT: (C)1980,JPO&Japio
JP10521178A 1978-08-29 1978-08-29 Manufacture of semiconductor device Granted JPS5533051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10521178A JPS5533051A (en) 1978-08-29 1978-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10521178A JPS5533051A (en) 1978-08-29 1978-08-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5533051A true JPS5533051A (en) 1980-03-08
JPS6122866B2 JPS6122866B2 (en) 1986-06-03

Family

ID=14401321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10521178A Granted JPS5533051A (en) 1978-08-29 1978-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533051A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893373A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductor device and manufacture thereof
JPS594165A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS59161867A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893373A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductor device and manufacture thereof
JPS594165A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS59161867A (en) * 1983-03-07 1984-09-12 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6122866B2 (en) 1986-06-03

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