JPS54132177A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54132177A JPS54132177A JP4074678A JP4074678A JPS54132177A JP S54132177 A JPS54132177 A JP S54132177A JP 4074678 A JP4074678 A JP 4074678A JP 4074678 A JP4074678 A JP 4074678A JP S54132177 A JPS54132177 A JP S54132177A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- region
- type
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To secure an assured isolation for the semiconductor device containing the thick epitaxial layer by forming the groove and then burying the organic resin insulator into the groove when forming the inter-element isolation layer reaching the semiconductor substrate containing the epitaxial layer.
CONSTITUTION: P-type base region 3 and collector region 5 are formed by diffusion within layer 2 of P-type Si substrate 1 containing N-type epitaxial layer 2, and N-type emitter region 4 is provided within region 3. The entire surface is covered with SiO2 film 6 with the opening drilled to insulator isolation region 8, and then groove 9 reaching substrate 1 is formed through etching with photo resist film 7 used as the mask. After this, film 7 is removed to grow SiO2 film 6' to the inner wall of groove 9 through the heat treatment. And the entire surface is covered with resist film 7' again, and then the optical polymerization is applied to film 7' with matching of the mask pattern to change film 7' into the high-molecular structure. After this, film 7' is removed except for groove 9, and the high-molecular structure is baked to convert it into hard film 10. And resist film pattern 11 is provided on the surface with Al wiring 15 coated to each region.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4074678A JPS54132177A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4074678A JPS54132177A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54132177A true JPS54132177A (en) | 1979-10-13 |
Family
ID=12589188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4074678A Pending JPS54132177A (en) | 1978-04-05 | 1978-04-05 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54132177A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128944A (en) * | 1981-02-03 | 1982-08-10 | Nec Corp | Maufacture of semiconductor device |
JPH06334031A (en) * | 1993-05-25 | 1994-12-02 | Nec Corp | Element-isolation method for semiconductor device |
-
1978
- 1978-04-05 JP JP4074678A patent/JPS54132177A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128944A (en) * | 1981-02-03 | 1982-08-10 | Nec Corp | Maufacture of semiconductor device |
JPS6217863B2 (en) * | 1981-02-03 | 1987-04-20 | Nippon Electric Co | |
JPH06334031A (en) * | 1993-05-25 | 1994-12-02 | Nec Corp | Element-isolation method for semiconductor device |
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