JPS5457978A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5457978A
JPS5457978A JP12402777A JP12402777A JPS5457978A JP S5457978 A JPS5457978 A JP S5457978A JP 12402777 A JP12402777 A JP 12402777A JP 12402777 A JP12402777 A JP 12402777A JP S5457978 A JPS5457978 A JP S5457978A
Authority
JP
Japan
Prior art keywords
region
type
sio
films
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12402777A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12402777A priority Critical patent/JPS5457978A/en
Publication of JPS5457978A publication Critical patent/JPS5457978A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To make accurate the electrode leading and to obtain fine pattern, by controlling independently the thickness of the oxide film on the guard ring of the Shottkey diode and that of the oxide film on the Shottkey barrier forming expected region.
CONSTITUTION: On the P type Si substrate 2, the N+ type implanted regions 3 and 3' are provided, the N type layer 1 is epitaxially grown on the entire surface, and it is covered with the SiO2 film 14 and the Si3N4 film 24. Next, the opening 241 is made on the films 24 and 14 at the end of substrate 2, and the P+ type isolation region 15 is formed by diffusion, and simultaneously, the SiO2 film 145 is grown on the opening 241. After that, the opening 242 is placed on the films 14 and 24, the collector region 16 in contact with the region 3 is formed by diffusion, and the SiO2 film 146 is caused on the surface. Next, the openings 247 and 248 are made, and the P type base region 17 and the P type guard ting region 16 of Shottkey diode are formed by diffusion and the surface is covered with the SiO2 films 147 and 148. After that, opening is placed on the films 146 and 147, the N+ type emitter region 19 and the N+ collector region 26 are formed by diffusion and the exposed surface is covered with the SiO2 films 149 and 1426
COPYRIGHT: (C)1979,JPO&Japio
JP12402777A 1977-10-18 1977-10-18 Manufacture for semiconductor device Pending JPS5457978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12402777A JPS5457978A (en) 1977-10-18 1977-10-18 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12402777A JPS5457978A (en) 1977-10-18 1977-10-18 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457978A true JPS5457978A (en) 1979-05-10

Family

ID=14875211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12402777A Pending JPS5457978A (en) 1977-10-18 1977-10-18 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457978A (en)

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