JPS5457978A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5457978A JPS5457978A JP12402777A JP12402777A JPS5457978A JP S5457978 A JPS5457978 A JP S5457978A JP 12402777 A JP12402777 A JP 12402777A JP 12402777 A JP12402777 A JP 12402777A JP S5457978 A JPS5457978 A JP S5457978A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- sio
- films
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To make accurate the electrode leading and to obtain fine pattern, by controlling independently the thickness of the oxide film on the guard ring of the Shottkey diode and that of the oxide film on the Shottkey barrier forming expected region.
CONSTITUTION: On the P type Si substrate 2, the N+ type implanted regions 3 and 3' are provided, the N type layer 1 is epitaxially grown on the entire surface, and it is covered with the SiO2 film 14 and the Si3N4 film 24. Next, the opening 241 is made on the films 24 and 14 at the end of substrate 2, and the P+ type isolation region 15 is formed by diffusion, and simultaneously, the SiO2 film 145 is grown on the opening 241. After that, the opening 242 is placed on the films 14 and 24, the collector region 16 in contact with the region 3 is formed by diffusion, and the SiO2 film 146 is caused on the surface. Next, the openings 247 and 248 are made, and the P type base region 17 and the P type guard ting region 16 of Shottkey diode are formed by diffusion and the surface is covered with the SiO2 films 147 and 148. After that, opening is placed on the films 146 and 147, the N+ type emitter region 19 and the N+ collector region 26 are formed by diffusion and the exposed surface is covered with the SiO2 films 149 and 1426
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12402777A JPS5457978A (en) | 1977-10-18 | 1977-10-18 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12402777A JPS5457978A (en) | 1977-10-18 | 1977-10-18 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5457978A true JPS5457978A (en) | 1979-05-10 |
Family
ID=14875211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12402777A Pending JPS5457978A (en) | 1977-10-18 | 1977-10-18 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5457978A (en) |
-
1977
- 1977-10-18 JP JP12402777A patent/JPS5457978A/en active Pending
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