JPS5578571A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5578571A
JPS5578571A JP15110978A JP15110978A JPS5578571A JP S5578571 A JPS5578571 A JP S5578571A JP 15110978 A JP15110978 A JP 15110978A JP 15110978 A JP15110978 A JP 15110978A JP S5578571 A JPS5578571 A JP S5578571A
Authority
JP
Japan
Prior art keywords
layer
diffused
impurities
yielded
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15110978A
Other languages
Japanese (ja)
Inventor
Takeshi Suzuki
Junichi Takita
Katsumi Akabane
Yoichi Nakajima
Isao Kojima
Michihiro Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15110978A priority Critical patent/JPS5578571A/en
Publication of JPS5578571A publication Critical patent/JPS5578571A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To eliminate the break over that is a forward-voltage resistant characteristic and to facilitate the formation of a bevell shape at the peripheral portion by providing a concave-shaped n-base at th outer portion in a semiconductor device having a pin-structure (a p-layer, an i-layer, and an n-layer).
CONSTITUTION: Ga impurities are diffused in both surfaces of a silicon substrate 1 at a high temperature, and the bottom side is removed, thereby an SiO2 p+i- structure is obtained (a). Then, after an n+-layer is formed by depositing phosphorus impurities at a low temperature, the sheet resistance of an exposed n+-layer is controlled (b). Thereafter, the n+-layer is diffused by high-temperature heat treatment, and a concave n-base layer is formed (c). Then, SiO2 films on the surfaces of an anode and a cathode are partially removed (d). Phosphorus impurities are selectively diffused, and n+p+in+ is yielded in the peripheral portion, and p+in+n+ is yielded in the central portion. Then, garium-acceptor impurities are partially diffused selectively (e).
COPYRIGHT: (C)1980,JPO&Japio
JP15110978A 1978-12-08 1978-12-08 Manufacture of semiconductor device Pending JPS5578571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15110978A JPS5578571A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15110978A JPS5578571A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5578571A true JPS5578571A (en) 1980-06-13

Family

ID=15511541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15110978A Pending JPS5578571A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578571A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260259A (en) * 1985-09-05 1987-03-16 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Asymmetrical thyristor and manufacturing thereof
JP2008213838A (en) * 2008-04-25 2008-09-18 Mazda Motor Corp Spare tire storage structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260259A (en) * 1985-09-05 1987-03-16 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Asymmetrical thyristor and manufacturing thereof
JP2008213838A (en) * 2008-04-25 2008-09-18 Mazda Motor Corp Spare tire storage structure

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