JPS5578571A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5578571A JPS5578571A JP15110978A JP15110978A JPS5578571A JP S5578571 A JPS5578571 A JP S5578571A JP 15110978 A JP15110978 A JP 15110978A JP 15110978 A JP15110978 A JP 15110978A JP S5578571 A JPS5578571 A JP S5578571A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffused
- impurities
- yielded
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To eliminate the break over that is a forward-voltage resistant characteristic and to facilitate the formation of a bevell shape at the peripheral portion by providing a concave-shaped n-base at th outer portion in a semiconductor device having a pin-structure (a p-layer, an i-layer, and an n-layer).
CONSTITUTION: Ga impurities are diffused in both surfaces of a silicon substrate 1 at a high temperature, and the bottom side is removed, thereby an SiO2 p+i- structure is obtained (a). Then, after an n+-layer is formed by depositing phosphorus impurities at a low temperature, the sheet resistance of an exposed n+-layer is controlled (b). Thereafter, the n+-layer is diffused by high-temperature heat treatment, and a concave n-base layer is formed (c). Then, SiO2 films on the surfaces of an anode and a cathode are partially removed (d). Phosphorus impurities are selectively diffused, and n+p+in+ is yielded in the peripheral portion, and p+in+n+ is yielded in the central portion. Then, garium-acceptor impurities are partially diffused selectively (e).
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15110978A JPS5578571A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15110978A JPS5578571A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5578571A true JPS5578571A (en) | 1980-06-13 |
Family
ID=15511541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15110978A Pending JPS5578571A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5578571A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260259A (en) * | 1985-09-05 | 1987-03-16 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | Asymmetrical thyristor and manufacturing thereof |
JP2008213838A (en) * | 2008-04-25 | 2008-09-18 | Mazda Motor Corp | Spare tire storage structure |
-
1978
- 1978-12-08 JP JP15110978A patent/JPS5578571A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6260259A (en) * | 1985-09-05 | 1987-03-16 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | Asymmetrical thyristor and manufacturing thereof |
JP2008213838A (en) * | 2008-04-25 | 2008-09-18 | Mazda Motor Corp | Spare tire storage structure |
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