JPS54114191A - Semiconductor pressure converting device - Google Patents

Abstract

PURPOSE: To enhance the temperature hysteresis characteristics at the zero point by providing the opening at the center part of the semiconductor substrate after coating the insulator film on the substrate surface, stacking the poly-crystal semiconductor layer containing the impurity on the substrate surface including the opening and then diffusing the resistance layer within the substrate through the heat treatment with the poly-crystal layer used at the same time as the electrode part.

CONSTITUTION: SiO₂ film 12 is coated on N-type Si substrate 11 with opening 13 provided at the center part, and then P-type impurity doped poly-crystal Si layer 14 is stacked on the entire surface of the substrate. Then only the resistance part of layer 14 and layer 16 to become the electrode part are made to remain through the photo etching, and the other areas are removed. And the impurity of layer 16 is diffused through the heating at the temperature higher than the formation temprature of the poly-crystal to form P-type region 15 at substrate 11 within opening 13, with remaining layer 16 used as the electrode. After this, the concavity is drilled on the back of substrate 11 to form thin-thick part 11b which functions as the diaphragm. In such way, poly- crystal layer 16 is used as the electrode, thus obtaining a converting device featuring the excellent temperature hysteresis at the zero point.

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