JPS5669876A - Manufacture of silicon avalanche photo-diode - Google Patents
Manufacture of silicon avalanche photo-diodeInfo
- Publication number
- JPS5669876A JPS5669876A JP14826879A JP14826879A JPS5669876A JP S5669876 A JPS5669876 A JP S5669876A JP 14826879 A JP14826879 A JP 14826879A JP 14826879 A JP14826879 A JP 14826879A JP S5669876 A JPS5669876 A JP S5669876A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- poly
- diode
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000010408 film Substances 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve yield and reliability by a method wherein mesa grooves at where a P-N junction is terminated are covered with pure thermal oxide films, poly Si with high specific resistance is filled into the grooves, and the surfaces of the poly Si are coated with an insulating film. CONSTITUTION:A P epitaxial layer 2 on an N<+> type Si substrate 1 is covered with an SiO2 mask 4, mesa grooves 14 are formed, and SiO2 thin-films 12 are made up on inclined planes. Poly Si11 with high specific resistance is filled to lap up to a surface of the SiO2 film 4. The film 4 is coated with a CVD SiO2 film 9, a hole is selectively made to the films 9, 4, and a P<+> connecting layer 3 is made up. An electrode 6 and a reflection preventive film 13 are built up, thus completing a diode. According to this constitution, a device by means of a P layer side injection system advantageous on characteristics is easily obtained in excellent yield and high reliability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14826879A JPS5669876A (en) | 1979-11-12 | 1979-11-12 | Manufacture of silicon avalanche photo-diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14826879A JPS5669876A (en) | 1979-11-12 | 1979-11-12 | Manufacture of silicon avalanche photo-diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5669876A true JPS5669876A (en) | 1981-06-11 |
Family
ID=15448963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14826879A Pending JPS5669876A (en) | 1979-11-12 | 1979-11-12 | Manufacture of silicon avalanche photo-diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5669876A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0913003A1 (en) * | 1996-07-03 | 1999-05-06 | Advanced Photonix, Inc. | Avalanching semiconductor device having an epitaxially grown layer |
| JP2007227750A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device and its manufacturing method |
| JP2014518458A (en) * | 2011-07-08 | 2014-07-28 | エクセリタス カナダ，インコーポレイテッド | Photon counting UV-APD |
| EP3939095A4 (en) * | 2019-03-12 | 2022-12-14 | Dephan Limited Liability Company (Dephan LLC) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
| EP3939093A4 (en) * | 2019-03-12 | 2022-12-14 | Dephan Limited Liability Company (Dephan LLC) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
-
1979
- 1979-11-12 JP JP14826879A patent/JPS5669876A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0913003A1 (en) * | 1996-07-03 | 1999-05-06 | Advanced Photonix, Inc. | Avalanching semiconductor device having an epitaxially grown layer |
| EP0913003A4 (en) * | 1996-07-03 | 1999-08-25 | Advanced Photonix Inc | Avalanching semiconductor device having an epitaxially grown layer |
| JP2007227750A (en) * | 2006-02-24 | 2007-09-06 | Seiko Instruments Inc | Semiconductor device and its manufacturing method |
| JP4584159B2 (en) * | 2006-02-24 | 2010-11-17 | セイコーインスツル株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| JP2014518458A (en) * | 2011-07-08 | 2014-07-28 | エクセリタス カナダ，インコーポレイテッド | Photon counting UV-APD |
| EP3939095A4 (en) * | 2019-03-12 | 2022-12-14 | Dephan Limited Liability Company (Dephan LLC) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
| EP3939093A4 (en) * | 2019-03-12 | 2022-12-14 | Dephan Limited Liability Company (Dephan LLC) | Avalanche photodetector (variants) and method for manufacturing the same (variants) |
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