JPS57178354A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57178354A
JPS57178354A JP6248781A JP6248781A JPS57178354A JP S57178354 A JPS57178354 A JP S57178354A JP 6248781 A JP6248781 A JP 6248781A JP 6248781 A JP6248781 A JP 6248781A JP S57178354 A JPS57178354 A JP S57178354A
Authority
JP
Japan
Prior art keywords
layer
epitaxial layer
barrier diode
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6248781A
Other languages
Japanese (ja)
Inventor
Kazuo Hoya
Sadao Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6248781A priority Critical patent/JPS57178354A/en
Publication of JPS57178354A publication Critical patent/JPS57178354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Abstract

PURPOSE:To reduce the variation of forward voltage for a Schottky barrier diode by a method wherein the surface of a semiconductor, on which a metal semiconductor barrier diode was formed, is formed as a layer having a higher impurity density than the other surface region of a semiconductor substrate. CONSTITUTION:An N<-> epitaxial layer 3 is formed on a P<-> type Si substrate 1 through the intermediary of an N<+> buried layer 2, and an isolation layer 4 is formed on the N<-> epitaxial layer 3 by performing P<+> diffusion. Then, an N2 layer having a relatively higher density than the N<-> epitaxial layer 3 by ion- implanting a donor, is formed on the part on which the Schottky barrier diode for the N<-> epitaxial layer 3 will be formed through a thin SiO2 film. Subsequently, a P<+> base 5 is formed by depositing and diffusing boron, and an N<+> emitter 6 and an N<+> collector lead-out part 7 are formed by diffusing phosphorus. Then, an emitter electrode E, a base electrode B, and a collector electrode C are formed.
JP6248781A 1981-04-27 1981-04-27 Semiconductor device Pending JPS57178354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6248781A JPS57178354A (en) 1981-04-27 1981-04-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6248781A JPS57178354A (en) 1981-04-27 1981-04-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57178354A true JPS57178354A (en) 1982-11-02

Family

ID=13201577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6248781A Pending JPS57178354A (en) 1981-04-27 1981-04-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57178354A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393151A (en) * 1986-10-07 1988-04-23 Toshiba Corp Semiconductor device
KR20000061059A (en) * 1999-03-23 2000-10-16 윤종용 Schottky diode with bwried layer and method of fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881490A (en) * 1972-01-27 1973-10-31
JPS5034484A (en) * 1973-06-26 1975-04-02
JPS53133377A (en) * 1977-04-27 1978-11-21 Hitachi Ltd Manufacture of schottky diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881490A (en) * 1972-01-27 1973-10-31
JPS5034484A (en) * 1973-06-26 1975-04-02
JPS53133377A (en) * 1977-04-27 1978-11-21 Hitachi Ltd Manufacture of schottky diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393151A (en) * 1986-10-07 1988-04-23 Toshiba Corp Semiconductor device
KR20000061059A (en) * 1999-03-23 2000-10-16 윤종용 Schottky diode with bwried layer and method of fabricating the same

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