JPS57178354A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57178354A JPS57178354A JP56062487A JP6248781A JPS57178354A JP S57178354 A JPS57178354 A JP S57178354A JP 56062487 A JP56062487 A JP 56062487A JP 6248781 A JP6248781 A JP 6248781A JP S57178354 A JPS57178354 A JP S57178354A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial layer
- barrier diode
- semiconductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To reduce the variation of forward voltage for a Schottky barrier diode by a method wherein the surface of a semiconductor, on which a metal semiconductor barrier diode was formed, is formed as a layer having a higher impurity density than the other surface region of a semiconductor substrate. CONSTITUTION:An N<-> epitaxial layer 3 is formed on a P<-> type Si substrate 1 through the intermediary of an N<+> buried layer 2, and an isolation layer 4 is formed on the N<-> epitaxial layer 3 by performing P<+> diffusion. Then, an N2 layer having a relatively higher density than the N<-> epitaxial layer 3 by ion- implanting a donor, is formed on the part on which the Schottky barrier diode for the N<-> epitaxial layer 3 will be formed through a thin SiO2 film. Subsequently, a P<+> base 5 is formed by depositing and diffusing boron, and an N<+> emitter 6 and an N<+> collector lead-out part 7 are formed by diffusing phosphorus. Then, an emitter electrode E, a base electrode B, and a collector electrode C are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062487A JPS57178354A (en) | 1981-04-27 | 1981-04-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062487A JPS57178354A (en) | 1981-04-27 | 1981-04-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57178354A true JPS57178354A (en) | 1982-11-02 |
Family
ID=13201577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56062487A Pending JPS57178354A (en) | 1981-04-27 | 1981-04-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57178354A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393151A (en) * | 1986-10-07 | 1988-04-23 | Toshiba Corp | Semiconductor device |
| KR20000061059A (en) * | 1999-03-23 | 2000-10-16 | 윤종용 | Schottky diode with bwried layer and method of fabricating the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4881490A (en) * | 1972-01-27 | 1973-10-31 | ||
| JPS5034484A (en) * | 1973-06-26 | 1975-04-02 | ||
| JPS53133377A (en) * | 1977-04-27 | 1978-11-21 | Hitachi Ltd | Manufacture of schottky diode |
-
1981
- 1981-04-27 JP JP56062487A patent/JPS57178354A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4881490A (en) * | 1972-01-27 | 1973-10-31 | ||
| JPS5034484A (en) * | 1973-06-26 | 1975-04-02 | ||
| JPS53133377A (en) * | 1977-04-27 | 1978-11-21 | Hitachi Ltd | Manufacture of schottky diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393151A (en) * | 1986-10-07 | 1988-04-23 | Toshiba Corp | Semiconductor device |
| KR20000061059A (en) * | 1999-03-23 | 2000-10-16 | 윤종용 | Schottky diode with bwried layer and method of fabricating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3202887A (en) | Mesa-transistor with impurity concentration in the base decreasing toward collector junction | |
| JPS57178354A (en) | Semiconductor device | |
| JPS6451658A (en) | Semiconductor device | |
| JPS5627965A (en) | Manufacture of semiconductor device | |
| GB1277138A (en) | High power avalanche diode and methods of making the same | |
| JPS5623774A (en) | Semiconductor device and its manufacture | |
| JPS5745274A (en) | Semiconductor device | |
| JPS57134967A (en) | Manufacture of semiconductor device | |
| JPS5577167A (en) | Semiconductor device | |
| GB1271896A (en) | Semiconductor rectifying junction device | |
| JPS5587446A (en) | Manufacture of semiconductor device | |
| JPS5776872A (en) | Semiconductor device | |
| JPS54158889A (en) | Manufacture of semiconductor device | |
| JPS5712564A (en) | Semiconductor device | |
| JPS5472985A (en) | Manufacture of integrated-circuit device | |
| GB1307538A (en) | Semiconductor structures and methods for forming such structures | |
| JPS6449261A (en) | Manufacture of bipolar transistor | |
| JPS5749249A (en) | Semiconductor integrated circuit device | |
| JPS5740939A (en) | P-n junction formation | |
| JPS54128294A (en) | Semiconductor device | |
| JPS5623770A (en) | Manufacture of semiconductor device | |
| JPS5776873A (en) | Manufacture of semiconductor device | |
| JPS54142080A (en) | Semiconductor device | |
| JPS57194534A (en) | Semiconductor device | |
| JPS56169319A (en) | Manufacture of semiconductor device |