JPS5712564A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5712564A JPS5712564A JP8661280A JP8661280A JPS5712564A JP S5712564 A JPS5712564 A JP S5712564A JP 8661280 A JP8661280 A JP 8661280A JP 8661280 A JP8661280 A JP 8661280A JP S5712564 A JPS5712564 A JP S5712564A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- schottky barrier
- buried layer
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce unevenness of positive directional characteristic of a semiconductor device by a method wherein an n<+> type buried layer is provided adjoining to an n<+> type buried layer, and is made to face with a metal on the surface forming a Schottky barrier interposing an epitaxial layer between them. CONSTITUTION:As ions ar driven in a p<-> type Si substrate 1 to form the n<+> type layer 2, P ions are driven in partially to form the n<+> type layer 11, and when the n type epitaxial layer 3 is accumulated thereon, the buried layer 11 diffuses greatly in the epitaxial layer. The n type layer 3 is isolated 13 with the p<+> type layer, p<+> type base region 4 is provided and an n<+> type base region 5, an n<+> type collector lead out layer 6 are formed in succession. An opening is formed in an SiO2 film 12 on the surface facing with the buried layer 11 to evaporated Al, and sintering is performed to form a Schottky barrier 8. Then an ohmic wiring 7 is provided, and the base layer 4 and the Schottky barrier are connected. By this constitution, because the buried layer 11 is extended toward the Schottky barrier, the value of series resistance to be generated by unevenness of specific resistance is reduced even when epitaxial layer 3 is thick, positive directional characteristic of the Schottky diode is equalized and yield is enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8661280A JPS5712564A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8661280A JPS5712564A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5712564A true JPS5712564A (en) | 1982-01-22 |
Family
ID=13891832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8661280A Pending JPS5712564A (en) | 1980-06-27 | 1980-06-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712564A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02125463A (en) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | Manufacture of semiconductor device |
| EP0545521A2 (en) * | 1991-12-06 | 1993-06-09 | National Semiconductor Corporation | Schottky diode structure and fabrication process |
-
1980
- 1980-06-27 JP JP8661280A patent/JPS5712564A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02125463A (en) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | Manufacture of semiconductor device |
| EP0545521A2 (en) * | 1991-12-06 | 1993-06-09 | National Semiconductor Corporation | Schottky diode structure and fabrication process |
| EP0545521A3 (en) * | 1991-12-06 | 1994-08-24 | Nat Semiconductor Corp | Schottky diode structure and fabrication process |
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