JPS56101779A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS56101779A JPS56101779A JP496080A JP496080A JPS56101779A JP S56101779 A JPS56101779 A JP S56101779A JP 496080 A JP496080 A JP 496080A JP 496080 A JP496080 A JP 496080A JP S56101779 A JPS56101779 A JP S56101779A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried layer
- epitaxial layer
- electrode
- schottky barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
PURPOSE:To improve electric characteristics in a Schottky barrier diode which has a buried layer between a semiconductor substrate and an epitaxial layer by etching the epitaxial layer under electrodes so as to form one electrode on the buried layer and the other a little above the layer. CONSTITUTION:An N<+> buried layer 2, an N type epitaxial layer 3 and an insulating film 6 are formed on a P type silicon substrate 1. By etching the part of the epitaxial layer where an anode electrode 8 is to be formed to the extent that the buried layer may not be exposed, the anode electrode is formed. On the other hand, by etching the part of the epitaxial layer where a cathode electrode is to be formed to the extent that the buried layer may be exposed, the electrode is connected directly to the buried layer. In the case of a Schottky barrier diode of such a construction, its resistance can be reduced to 1/10 or less of conventional series resistance values and its current-voltage characteristic can be improved greatly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP496080A JPS56101779A (en) | 1980-01-18 | 1980-01-18 | Schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP496080A JPS56101779A (en) | 1980-01-18 | 1980-01-18 | Schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56101779A true JPS56101779A (en) | 1981-08-14 |
Family
ID=11598142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP496080A Pending JPS56101779A (en) | 1980-01-18 | 1980-01-18 | Schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101779A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384155A (en) * | 1986-09-29 | 1988-04-14 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH04365378A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4941465A (en) * | 1972-03-04 | 1974-04-18 | ||
| JPS5051271A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5125074A (en) * | 1974-08-27 | 1976-03-01 | Sanyo Electric Co | Handotaisochi no kontakutoryoikikeiseihoho |
| JPS5450275A (en) * | 1977-09-27 | 1979-04-20 | Matsushita Electric Ind Co Ltd | Production of schottky barrier type semiconductor device |
-
1980
- 1980-01-18 JP JP496080A patent/JPS56101779A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4941465A (en) * | 1972-03-04 | 1974-04-18 | ||
| JPS5051271A (en) * | 1973-09-07 | 1975-05-08 | ||
| JPS5125074A (en) * | 1974-08-27 | 1976-03-01 | Sanyo Electric Co | Handotaisochi no kontakutoryoikikeiseihoho |
| JPS5450275A (en) * | 1977-09-27 | 1979-04-20 | Matsushita Electric Ind Co Ltd | Production of schottky barrier type semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384155A (en) * | 1986-09-29 | 1988-04-14 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH04365378A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
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