JPS6489358A - Compound semiconductor device - Google Patents
Compound semiconductor deviceInfo
- Publication number
- JPS6489358A JPS6489358A JP24717187A JP24717187A JPS6489358A JP S6489358 A JPS6489358 A JP S6489358A JP 24717187 A JP24717187 A JP 24717187A JP 24717187 A JP24717187 A JP 24717187A JP S6489358 A JPS6489358 A JP S6489358A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- gaas
- compound semiconductor
- layer
- ohmic electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To alleviate the local concentration of an electric field and a current and to improve surge resistance characteristic by providing a high concentration compound semiconductor grown layer between the ohmic electrode of a resistance element and a resistance layer. CONSTITUTION:An n-type GaAs resistance layer 2 is formed by selective ion implanting on a semi-insulating GaAs substrate 1, and ohmic electrode layers 3a, 3b are formed through n<+> type GaAs selectively grown layers 6a, 6b selectively grown by an MOCVD method on both ends to form a resistance element. An SiO2 film is formed as a surface passivation film 5. Other semiconductor compound may be employed instead of the GaAs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24717187A JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24717187A JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6489358A true JPS6489358A (en) | 1989-04-03 |
JPH0571184B2 JPH0571184B2 (en) | 1993-10-06 |
Family
ID=17159497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24717187A Granted JPS6489358A (en) | 1987-09-29 | 1987-09-29 | Compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489358A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534898B1 (en) | 1999-10-01 | 2003-03-18 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device having mutually opposing thin plate section |
-
1987
- 1987-09-29 JP JP24717187A patent/JPS6489358A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534898B1 (en) | 1999-10-01 | 2003-03-18 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device having mutually opposing thin plate section |
Also Published As
Publication number | Publication date |
---|---|
JPH0571184B2 (en) | 1993-10-06 |
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