JPS6489358A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS6489358A
JPS6489358A JP24717187A JP24717187A JPS6489358A JP S6489358 A JPS6489358 A JP S6489358A JP 24717187 A JP24717187 A JP 24717187A JP 24717187 A JP24717187 A JP 24717187A JP S6489358 A JPS6489358 A JP S6489358A
Authority
JP
Japan
Prior art keywords
resistance
gaas
compound semiconductor
layer
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24717187A
Other languages
Japanese (ja)
Other versions
JPH0571184B2 (en
Inventor
Kimiaki Katsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24717187A priority Critical patent/JPS6489358A/en
Publication of JPS6489358A publication Critical patent/JPS6489358A/en
Publication of JPH0571184B2 publication Critical patent/JPH0571184B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To alleviate the local concentration of an electric field and a current and to improve surge resistance characteristic by providing a high concentration compound semiconductor grown layer between the ohmic electrode of a resistance element and a resistance layer. CONSTITUTION:An n-type GaAs resistance layer 2 is formed by selective ion implanting on a semi-insulating GaAs substrate 1, and ohmic electrode layers 3a, 3b are formed through n<+> type GaAs selectively grown layers 6a, 6b selectively grown by an MOCVD method on both ends to form a resistance element. An SiO2 film is formed as a surface passivation film 5. Other semiconductor compound may be employed instead of the GaAs.
JP24717187A 1987-09-29 1987-09-29 Compound semiconductor device Granted JPS6489358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24717187A JPS6489358A (en) 1987-09-29 1987-09-29 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24717187A JPS6489358A (en) 1987-09-29 1987-09-29 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS6489358A true JPS6489358A (en) 1989-04-03
JPH0571184B2 JPH0571184B2 (en) 1993-10-06

Family

ID=17159497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24717187A Granted JPS6489358A (en) 1987-09-29 1987-09-29 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489358A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534898B1 (en) 1999-10-01 2003-03-18 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device having mutually opposing thin plate section

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534898B1 (en) 1999-10-01 2003-03-18 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device having mutually opposing thin plate section

Also Published As

Publication number Publication date
JPH0571184B2 (en) 1993-10-06

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