JPS6420660A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6420660A
JPS6420660A JP17601787A JP17601787A JPS6420660A JP S6420660 A JPS6420660 A JP S6420660A JP 17601787 A JP17601787 A JP 17601787A JP 17601787 A JP17601787 A JP 17601787A JP S6420660 A JPS6420660 A JP S6420660A
Authority
JP
Japan
Prior art keywords
region
schottky barrier
type
oxygen atoms
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17601787A
Other languages
Japanese (ja)
Inventor
Hideo Kawasaki
Masasuke Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17601787A priority Critical patent/JPS6420660A/en
Publication of JPS6420660A publication Critical patent/JPS6420660A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress an increase in a forward voltage and to obtain a high breakdown voltage in the inverse direction by forming a polysilicon region which contains a specific amount of oxygen atoms between a low concentration semiconductor region and a Schottky barrier metal region. CONSTITUTION:An N-type semiconductor silicon region 2 having the same conductivity type as an N-type semiconductor silicon substrate 1 and predetermined concentration is, for example, epitaxially grown on the substrate 1. Further, an opposite conductivity type P-type diffused region 3 which becomes a guard ring region is formed, and the window of a Schottky barrier region 4 is formed. Thereafter, a polysilicon region 8 which contains 0-45% of oxygen atoms is formed, a Schottky barrier metal region 5 is formed thereon, and a cathode electrode 6 and an insulating film 7 are formed. Thus, an increase in a forward voltage is suppressed to obtain a high breakdown voltage in the inverse direction.
JP17601787A 1987-07-16 1987-07-16 Semiconductor device Pending JPS6420660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17601787A JPS6420660A (en) 1987-07-16 1987-07-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17601787A JPS6420660A (en) 1987-07-16 1987-07-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6420660A true JPS6420660A (en) 1989-01-24

Family

ID=16006264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17601787A Pending JPS6420660A (en) 1987-07-16 1987-07-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6420660A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058952U (en) * 1991-07-15 1993-02-05 日本インター株式会社 Shutoki barrier diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058952U (en) * 1991-07-15 1993-02-05 日本インター株式会社 Shutoki barrier diode

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