JPS6420660A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6420660A JPS6420660A JP17601787A JP17601787A JPS6420660A JP S6420660 A JPS6420660 A JP S6420660A JP 17601787 A JP17601787 A JP 17601787A JP 17601787 A JP17601787 A JP 17601787A JP S6420660 A JPS6420660 A JP S6420660A
- Authority
- JP
- Japan
- Prior art keywords
- region
- schottky barrier
- type
- oxygen atoms
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress an increase in a forward voltage and to obtain a high breakdown voltage in the inverse direction by forming a polysilicon region which contains a specific amount of oxygen atoms between a low concentration semiconductor region and a Schottky barrier metal region. CONSTITUTION:An N-type semiconductor silicon region 2 having the same conductivity type as an N-type semiconductor silicon substrate 1 and predetermined concentration is, for example, epitaxially grown on the substrate 1. Further, an opposite conductivity type P-type diffused region 3 which becomes a guard ring region is formed, and the window of a Schottky barrier region 4 is formed. Thereafter, a polysilicon region 8 which contains 0-45% of oxygen atoms is formed, a Schottky barrier metal region 5 is formed thereon, and a cathode electrode 6 and an insulating film 7 are formed. Thus, an increase in a forward voltage is suppressed to obtain a high breakdown voltage in the inverse direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17601787A JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17601787A JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6420660A true JPS6420660A (en) | 1989-01-24 |
Family
ID=16006264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17601787A Pending JPS6420660A (en) | 1987-07-16 | 1987-07-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6420660A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH058952U (en) * | 1991-07-15 | 1993-02-05 | 日本インター株式会社 | Shutoki barrier diode |
-
1987
- 1987-07-16 JP JP17601787A patent/JPS6420660A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH058952U (en) * | 1991-07-15 | 1993-02-05 | 日本インター株式会社 | Shutoki barrier diode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5031009A (en) | Conductivity modulation semiconductor with no negative resistance characteristics | |
JPS5539619A (en) | Thyristor | |
GB1153428A (en) | Improvements in Semiconductor Devices. | |
EP0071335B1 (en) | Field effect transistor | |
JPS5595370A (en) | Compound semiconductor field-effect transistor | |
JPS645070A (en) | Vertical insulated gate field effect transistor | |
GB949646A (en) | Improvements in or relating to semiconductor devices | |
US4496963A (en) | Semiconductor device with an ion implanted stabilization layer | |
GB1096777A (en) | Improvements in rectifying semi-conductor bodies | |
US3694719A (en) | Schottky barrier diode | |
JPS5473585A (en) | Gate turn-off thyristor | |
JPS6420660A (en) | Semiconductor device | |
GB1108774A (en) | Transistors | |
GB1079309A (en) | Semiconductor rectifiers | |
JPS5588372A (en) | Lateral type transistor | |
JPS568873A (en) | Bipolar transistor | |
JPS5529175A (en) | Planar type transistor | |
JPS54141596A (en) | Semiconductor device | |
JPS5552219A (en) | Semiconductor wafer | |
ES487066A1 (en) | High voltage dielectrically isolated solid-state switch | |
JPS5612779A (en) | Zener diode | |
JPS6477968A (en) | Semiconductor device | |
SU599659A1 (en) | Method of obtaining semiconductor devices based on compositions of the a-111-b-v type | |
JPS57128960A (en) | Semiconductor device | |
JPH01257372A (en) | Insulated gate field effect transistor |