JPS5529175A - Planar type transistor - Google Patents

Planar type transistor

Info

Publication number
JPS5529175A
JPS5529175A JP10307278A JP10307278A JPS5529175A JP S5529175 A JPS5529175 A JP S5529175A JP 10307278 A JP10307278 A JP 10307278A JP 10307278 A JP10307278 A JP 10307278A JP S5529175 A JPS5529175 A JP S5529175A
Authority
JP
Japan
Prior art keywords
region
type
base
collector
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10307278A
Other languages
Japanese (ja)
Inventor
Ikunori Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10307278A priority Critical patent/JPS5529175A/en
Publication of JPS5529175A publication Critical patent/JPS5529175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region

Abstract

PURPOSE:To increase a level of the reverse bias secondary breakage resistance by making the distance between the inversed conductive type region and the base region narrower than that between the base region and the substrate, when forming the inversed conductive type region surrounding the base region within the epitaxial layer developed on the semiconductor substarte. CONSTITUTION:Over an n<+>-type semiconductor substarte 8 serving as a collector region developed is an epitaxial growth to form an n--type layer 7 serving as a collector region too, within which a p-type base region 6 is formed by diffusion. Further within the region 6 formed is an n-type emitter region 5. Then, another n-type region 15 with the higher impurity ion concentration than that of the layer 7 is formed by diffusion so as to surround the base region 6 at such position that the distance between the regions 15 and 16 becomes narrower than that between the region 6 and the substrate 8. By so doing, the maximum voltage applied on the collector-base junction depends on the break-down voltage between the regions 15 and 16, thereby increasing a level of the reverse bise secondary breakage resistance.
JP10307278A 1978-08-23 1978-08-23 Planar type transistor Pending JPS5529175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10307278A JPS5529175A (en) 1978-08-23 1978-08-23 Planar type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10307278A JPS5529175A (en) 1978-08-23 1978-08-23 Planar type transistor

Publications (1)

Publication Number Publication Date
JPS5529175A true JPS5529175A (en) 1980-03-01

Family

ID=14344439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10307278A Pending JPS5529175A (en) 1978-08-23 1978-08-23 Planar type transistor

Country Status (1)

Country Link
JP (1) JPS5529175A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733315U (en) * 1980-08-02 1982-02-22
JPS591743A (en) * 1982-06-25 1984-01-07 東レ株式会社 Shenil knitted fabric

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733315U (en) * 1980-08-02 1982-02-22
JPS6034819Y2 (en) * 1980-08-02 1985-10-17 トヨタ自動車株式会社 Slide bearing support device
JPS591743A (en) * 1982-06-25 1984-01-07 東レ株式会社 Shenil knitted fabric

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