JPS5623770A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623770A
JPS5623770A JP10002679A JP10002679A JPS5623770A JP S5623770 A JPS5623770 A JP S5623770A JP 10002679 A JP10002679 A JP 10002679A JP 10002679 A JP10002679 A JP 10002679A JP S5623770 A JPS5623770 A JP S5623770A
Authority
JP
Japan
Prior art keywords
region
withstand voltage
type
layer
voltage transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10002679A
Other languages
Japanese (ja)
Inventor
Kuniaki Kumamaru
Seiji Yasuda
Yutaka Etsuno
Shunichi Kai
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10002679A priority Critical patent/JPS5623770A/en
Publication of JPS5623770A publication Critical patent/JPS5623770A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the raturation characteristic and to reduce the series resistance of the collector of a low withstand voltage semiconductor element by a method wherein by a method wherein a high withstand voltage transistor having a thick collector region and a low withstand voltage transistor having a thin collector region are formed in a same semiconductor substrate. CONSTITUTION:A deep n type well region 15 made by ion implantation at an appointed region of a p type Si substrate 11 and a shallow n<+> type buried region 18 made by diffusion at a distance are formed respectively. An n type layer 20 to constitute collectors is made to grow epitaxially on the whole face, and the layer 20 is divided by a p<+> type region 21 into a thin, low withstand voltage transistor forming region containing the region 18 and a thick, high withstand voltage transistor forming region containing the region 15. Using an SiO2 film 22 having openings 23, 24 and an SiO2 film 25 containing impurity, a p type base region 26 of low withstand voltage element to be made in one side of the layer 20 and a p type base region 27 of high withstand voltage element to be made in another side of the layer 20 are formed respectively by diffusion. Then n type emitter regions 30, 32 are formed respectively in the regions 26, 27.
JP10002679A 1979-08-06 1979-08-06 Manufacture of semiconductor device Pending JPS5623770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10002679A JPS5623770A (en) 1979-08-06 1979-08-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10002679A JPS5623770A (en) 1979-08-06 1979-08-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5623770A true JPS5623770A (en) 1981-03-06

Family

ID=14263018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10002679A Pending JPS5623770A (en) 1979-08-06 1979-08-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623770A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265451A (en) * 1985-09-16 1987-03-24 テクトロニツクス・インコ−ポレイテツド semiconductor integrated circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS5011180A (en) * 1973-05-28 1975-02-05
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS5218178A (en) * 1975-07-31 1977-02-10 Nat Semiconductor Corp Monolithic ic transistor having low collector resistance and method of producing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS5011180A (en) * 1973-05-28 1975-02-05
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS5218178A (en) * 1975-07-31 1977-02-10 Nat Semiconductor Corp Monolithic ic transistor having low collector resistance and method of producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265451A (en) * 1985-09-16 1987-03-24 テクトロニツクス・インコ−ポレイテツド semiconductor integrated circuit

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