JPS56135965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56135965A
JPS56135965A JP4088680A JP4088680A JPS56135965A JP S56135965 A JPS56135965 A JP S56135965A JP 4088680 A JP4088680 A JP 4088680A JP 4088680 A JP4088680 A JP 4088680A JP S56135965 A JPS56135965 A JP S56135965A
Authority
JP
Japan
Prior art keywords
region
type
emitter region
junction
hfe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4088680A
Other languages
Japanese (ja)
Inventor
Hideyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4088680A priority Critical patent/JPS56135965A/en
Publication of JPS56135965A publication Critical patent/JPS56135965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a transistor bearable to a reverse bias at EB junction without an hFE deterioration phenomenon by avalanche break-down of the EB junction by a method wherein a side face of an emitter region is surrounded by an emitter region of low impurity concentration. CONSTITUTION:A P type silicon substrate 1 is formed with an N type first burried layer 2, a collector region 3-A, a P type second burried layer 4 and a P type separation region 5. Then, a P type impurity is implanted from the surface 3-A, a base region 9 being formed at the depth of the order of 1mu below the surface, and a P type region 8 for drawing out a base contact and the emitter region 10 being formed. The emitter region 10 is formed so as not to have a junction directly with the P type region 8 for drawing out the base contact. Since an N type epitaxial layer 3-a equivalent to the collector region exists on the side face of the emitter region 10, the hFE deterioration by recombination of the surfaces does not appear and accordingly, the EB withstand voltage is improved.
JP4088680A 1980-03-28 1980-03-28 Semiconductor device Pending JPS56135965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4088680A JPS56135965A (en) 1980-03-28 1980-03-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4088680A JPS56135965A (en) 1980-03-28 1980-03-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56135965A true JPS56135965A (en) 1981-10-23

Family

ID=12592986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4088680A Pending JPS56135965A (en) 1980-03-28 1980-03-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135965A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166923A2 (en) * 1984-06-29 1986-01-08 International Business Machines Corporation High performance bipolar transistor having a lightly doped guard ring disposed between the emitter and the extrinsic base region
JPS62272567A (en) * 1986-05-21 1987-11-26 Hitachi Ltd Semiconductor device
JP2011089126A (en) * 2006-06-21 2011-05-06 Hitachi Chem Co Ltd Method for preventing adhesive or tackifier forming adhesive layer or tackifier layer of object to be wound-up from adhering to inner surface of reel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130374A (en) * 1974-03-30 1975-10-15
JPS5136594A (en) * 1974-07-19 1976-03-27 Comex
JPS5349964A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50130374A (en) * 1974-03-30 1975-10-15
JPS5136594A (en) * 1974-07-19 1976-03-27 Comex
JPS5349964A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166923A2 (en) * 1984-06-29 1986-01-08 International Business Machines Corporation High performance bipolar transistor having a lightly doped guard ring disposed between the emitter and the extrinsic base region
JPS62272567A (en) * 1986-05-21 1987-11-26 Hitachi Ltd Semiconductor device
JPH0834214B2 (en) * 1986-05-21 1996-03-29 株式会社日立製作所 Method for manufacturing semiconductor device
JP2011089126A (en) * 2006-06-21 2011-05-06 Hitachi Chem Co Ltd Method for preventing adhesive or tackifier forming adhesive layer or tackifier layer of object to be wound-up from adhering to inner surface of reel

Similar Documents

Publication Publication Date Title
GB1231493A (en)
JPS56135965A (en) Semiconductor device
GB1455260A (en) Semiconductor devices
JPS5473585A (en) Gate turn-off thyristor
GB1076371A (en) Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction
JPS5785266A (en) Zener diode
GB899919A (en) Improvements in semi-conductive devices
FR2363897A1 (en) Darlington amplifier with heavily doped buried regions - forming a diode with high breakdown voltage
JPS5596675A (en) Semiconductor device
JPS5623774A (en) Semiconductor device and its manufacture
JPS5582461A (en) Semiconductor integrated circuit device
GB1446386A (en) Single bipolar transistor memory cell and methods of operation and fabrication
JPS5619653A (en) Bipolar cmos semiconductor device and manufacture thereof
JPS5745274A (en) Semiconductor device
JPS5588378A (en) Semiconductor device
JPS5687360A (en) Transistor device
JPS5529175A (en) Planar type transistor
JPS5588372A (en) Lateral type transistor
JPS562667A (en) Semiconductor device and manufacture thereof
JPS55162263A (en) Semiconductor device
JPS55134963A (en) Composite semiconductor device and manufacture thereof
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
JPS5788769A (en) Semiconductor device
JPS5793579A (en) Compound semiconductor device
JPS5563879A (en) Semiconductor device