JPS55134963A - Composite semiconductor device and manufacture thereof - Google Patents

Composite semiconductor device and manufacture thereof

Info

Publication number
JPS55134963A
JPS55134963A JP4283879A JP4283879A JPS55134963A JP S55134963 A JPS55134963 A JP S55134963A JP 4283879 A JP4283879 A JP 4283879A JP 4283879 A JP4283879 A JP 4283879A JP S55134963 A JPS55134963 A JP S55134963A
Authority
JP
Japan
Prior art keywords
layer
mask
transistor
polycrystalline
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4283879A
Other languages
Japanese (ja)
Inventor
Tetsutada Sakurai
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4283879A priority Critical patent/JPS55134963A/en
Publication of JPS55134963A publication Critical patent/JPS55134963A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To devise the improvement of characteristics by having the base layer of an npn-transistor higher impurity concentration than the collector layer wherein the formation of a composite device with a pnp-transistor is made possible. CONSTITUTION:An n-epitaxial layer 56 is separated by n<+>-layers 58, 59 provided on a p-type Si substrate 52 and epitaxial formation is made for an n-layer 63 and a polycrystalline layer 64 through an Si3N4 mask 61. Then, etching is done by using an Si3N4 mask 65 and grooves are formed after leaving the layer 63. After removing the mask 65, an n<+>-layer 69 and an SiO2 layer 70 are stacked and the mask 61 is removed. Furthermore, epitaxial formation is made for an n-layer 73 and a polycrystalline Si layer 74 and the groove reaches the substrate 52 is etched by applying an SiO2 mask 75. After removing the mask 75, a p<+>-layer 82 and an SiO2 layer 83 are provided and they are covered with a polycrystalline Si layer 84. Finally, a main surface 85 is formed by abrashing and etching the side of the substrate 52 and fixed positioning p-layer and n-layers are selectively formed for the exposed n-layer and p-layers and the base of an npn-transistor Q2 is made to have higher concentration than the collector transistor Q2 is simultaneously formed with a pnp-transistor Q1. A high hfe and punch-through free device is developed.
JP4283879A 1979-04-09 1979-04-09 Composite semiconductor device and manufacture thereof Pending JPS55134963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4283879A JPS55134963A (en) 1979-04-09 1979-04-09 Composite semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4283879A JPS55134963A (en) 1979-04-09 1979-04-09 Composite semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS55134963A true JPS55134963A (en) 1980-10-21

Family

ID=12647110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4283879A Pending JPS55134963A (en) 1979-04-09 1979-04-09 Composite semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS55134963A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131943A (en) * 1980-03-19 1981-10-15 Fujitsu Ltd Semiconductor device
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4692784A (en) * 1983-04-12 1987-09-08 Nec Corporation Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131943A (en) * 1980-03-19 1981-10-15 Fujitsu Ltd Semiconductor device
JPS5974672A (en) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
US4692784A (en) * 1983-04-12 1987-09-08 Nec Corporation Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices

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