JPS5599761A - Manufacutre of integrated circuit device - Google Patents
Manufacutre of integrated circuit deviceInfo
- Publication number
- JPS5599761A JPS5599761A JP712479A JP712479A JPS5599761A JP S5599761 A JPS5599761 A JP S5599761A JP 712479 A JP712479 A JP 712479A JP 712479 A JP712479 A JP 712479A JP S5599761 A JPS5599761 A JP S5599761A
- Authority
- JP
- Japan
- Prior art keywords
- type
- forming
- region
- regions
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve linearity by forming a schottky barrier diode by the process same as used in, and simultaneously with, forming an ohmic contact to a transistor. CONSTITUTION:DI is the log diode and TR is the transistor. After N-type silicon layer is epitaxially grown on the surface of P-type Si substrate 10 via N<+>-buried-in layer 12, P-type region 16 is formed by using Si oxide film 14 as a mask and diffusing an acceptor impurity, and the N-type Si region is separated into regions 18A and 18B. P-type base region 20 is formed in region 18B, and then N<+>-type regions 22, 26 and 24 are formed in regions 18A, 18B and 20. Next, Schottky barrier forming Al layer 28 contact forming Al layers 30, 32, 34 and 36 are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP712479A JPS5599761A (en) | 1979-01-26 | 1979-01-26 | Manufacutre of integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP712479A JPS5599761A (en) | 1979-01-26 | 1979-01-26 | Manufacutre of integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599761A true JPS5599761A (en) | 1980-07-30 |
Family
ID=11657319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP712479A Pending JPS5599761A (en) | 1979-01-26 | 1979-01-26 | Manufacutre of integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599761A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492972A (en) * | 1981-08-17 | 1985-01-08 | Honeywell Inc. | JFET Monolithic integrated circuit with input bias current temperature compensation |
-
1979
- 1979-01-26 JP JP712479A patent/JPS5599761A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492972A (en) * | 1981-08-17 | 1985-01-08 | Honeywell Inc. | JFET Monolithic integrated circuit with input bias current temperature compensation |
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