JPS5654062A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5654062A
JPS5654062A JP13011579A JP13011579A JPS5654062A JP S5654062 A JPS5654062 A JP S5654062A JP 13011579 A JP13011579 A JP 13011579A JP 13011579 A JP13011579 A JP 13011579A JP S5654062 A JPS5654062 A JP S5654062A
Authority
JP
Japan
Prior art keywords
region
film
type
contact window
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13011579A
Other languages
Japanese (ja)
Other versions
JPH0139221B2 (en
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13011579A priority Critical patent/JPS5654062A/en
Publication of JPS5654062A publication Critical patent/JPS5654062A/en
Publication of JPH0139221B2 publication Critical patent/JPH0139221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the production process employing an SiO2 film, a polycrystalline Si film, a PSG film as a mask when an electrode contact window is formed in a bipolar type IC combining a transistor and a Schottky barrier diode. CONSTITUTION:An N<+> type collector contact region 2 and a P type base region 3 are formed by diffusion on an N type Si collector layer 1 which is entirely covered with an SiO2 film 4. With a photoresist mask, a collector contact window 6 is formed by etching on the region 2 and an emitter contact window 6, on a part of the region 3 corresponding to an N type emitter region 13 to be provided there. The film 4 is locally made thinner corresponding to the base contact window 8 and a contact window 9 for diodes and a polycrystalline Si film 11 and a PSG film 12 are applied thereon in layers. Thereafter, P is diffused into the film 12 by a heat treatment to form an N type emitter region 13 in the region 3. At the same time, a region 14 high in the concentration of an N type impurity is created in the region 2.
JP13011579A 1979-10-09 1979-10-09 Production of semiconductor device Granted JPS5654062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13011579A JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13011579A JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5654062A true JPS5654062A (en) 1981-05-13
JPH0139221B2 JPH0139221B2 (en) 1989-08-18

Family

ID=15026301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13011579A Granted JPS5654062A (en) 1979-10-09 1979-10-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654062A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPS59209854A (en) * 1983-05-13 1984-11-28 鐘淵化学工業株式会社 Thin-film changed into multilayer and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940062A (en) * 1972-07-13 1974-04-15 Intersil Inc
JPS5121792A (en) * 1974-08-16 1976-02-21 Hitachi Ltd Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940062A (en) * 1972-07-13 1974-04-15 Intersil Inc
JPS5121792A (en) * 1974-08-16 1976-02-21 Hitachi Ltd Handotaisochino seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPH035058B2 (en) * 1982-10-22 1991-01-24 Fujitsu Ltd
JPS59209854A (en) * 1983-05-13 1984-11-28 鐘淵化学工業株式会社 Thin-film changed into multilayer and manufacture thereof

Also Published As

Publication number Publication date
JPH0139221B2 (en) 1989-08-18

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