JPS54101288A - Shottky iil - Google Patents

Shottky iil

Info

Publication number
JPS54101288A
JPS54101288A JP723278A JP723278A JPS54101288A JP S54101288 A JPS54101288 A JP S54101288A JP 723278 A JP723278 A JP 723278A JP 723278 A JP723278 A JP 723278A JP S54101288 A JPS54101288 A JP S54101288A
Authority
JP
Japan
Prior art keywords
iil
constituted
barrier diode
schottky barrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP723278A
Other languages
Japanese (ja)
Other versions
JPS6155781B2 (en
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP723278A priority Critical patent/JPS54101288A/en
Publication of JPS54101288A publication Critical patent/JPS54101288A/en
Publication of JPS6155781B2 publication Critical patent/JPS6155781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:To enable manufacture in simple process, by forming the metal film via the epitaxial growing layer which can control the impurity concentration with lower value to constitute the Schottky barrier diode. CONSTITUTION:IIL is constituted on the n<-> type semiconductor surface with the combination of at least pnp lateral transistor and npn opposite transistor, the Schottky IIL having the Schottky barrier diode is constituted on the n<+> type diffusion region 5 constituting the collector of the npn opposite transistor, the n<-> type epitaxial layer 8a in contact with the n<+> type diffusion region 5 constituting the collector through the window opening part provided with the insulation film on the n<-> type semiconductor 2, and the Schottky barrier diode is constituted between the layer 8a and the matellic film 12 formed on the surface.
JP723278A 1978-01-27 1978-01-27 Shottky iil Granted JPS54101288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Publications (2)

Publication Number Publication Date
JPS54101288A true JPS54101288A (en) 1979-08-09
JPS6155781B2 JPS6155781B2 (en) 1986-11-29

Family

ID=11660240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP723278A Granted JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Country Status (1)

Country Link
JP (1) JPS54101288A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes

Also Published As

Publication number Publication date
JPS6155781B2 (en) 1986-11-29

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