JPS6459956A - Heterostructure bipolar transistor and manufacture thereof - Google Patents

Heterostructure bipolar transistor and manufacture thereof

Info

Publication number
JPS6459956A
JPS6459956A JP21881487A JP21881487A JPS6459956A JP S6459956 A JPS6459956 A JP S6459956A JP 21881487 A JP21881487 A JP 21881487A JP 21881487 A JP21881487 A JP 21881487A JP S6459956 A JPS6459956 A JP S6459956A
Authority
JP
Japan
Prior art keywords
type
layer
high concentrated
gallium arsenide
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21881487A
Other languages
Japanese (ja)
Other versions
JPH0658915B2 (en
Inventor
Masafumi Kawanaka
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62218814A priority Critical patent/JPH0658915B2/en
Publication of JPS6459956A publication Critical patent/JPS6459956A/en
Publication of JPH0658915B2 publication Critical patent/JPH0658915B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obliterate the potential barrier of a collector junction and enable the formation of a high concentrated p-type germanium base layer by a method wherein a collector electrode and a base electrode are formed on an n-type gallium arsenide thin film and a p-type germanium thin film respectively. CONSTITUTION:A high concentrated n-type gallium arsenide layer 2 of a collector region, a high concentrated p-type germanium layer 4 of a base region, an n-type gallium arsenide layer 5 of an emitter region, and a high concentrated n-type gallium arsenide layer 6 are respectively grown successively on a semi- insulating gallium arsenide substrate 1. However, arsenic is diffused from the high concentrated n-type gallium arsenide layer 2 into the high concentrated p-type germanium layer 4 during growth of the high concentrated p-type germanium, so that an n-type germanium layer 3 is formed at the interface. That is, the base layer consisting of the germanium layers 3 and 4 is made to change gradually from an n-type to a p-type in polarity.
JP62218814A 1987-08-31 1987-08-31 Heterostructure bipolar transistor and manufacturing method thereof Expired - Lifetime JPH0658915B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62218814A JPH0658915B2 (en) 1987-08-31 1987-08-31 Heterostructure bipolar transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62218814A JPH0658915B2 (en) 1987-08-31 1987-08-31 Heterostructure bipolar transistor and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6459956A true JPS6459956A (en) 1989-03-07
JPH0658915B2 JPH0658915B2 (en) 1994-08-03

Family

ID=16725761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62218814A Expired - Lifetime JPH0658915B2 (en) 1987-08-31 1987-08-31 Heterostructure bipolar transistor and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0658915B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023011A (en) * 2001-07-05 2003-01-24 Matsushita Electric Ind Co Ltd Bipolar transistor device and manufacturing method therefor
JP2007294782A (en) * 2006-04-27 2007-11-08 Sony Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023011A (en) * 2001-07-05 2003-01-24 Matsushita Electric Ind Co Ltd Bipolar transistor device and manufacturing method therefor
JP2007294782A (en) * 2006-04-27 2007-11-08 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0658915B2 (en) 1994-08-03

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