JPS6459956A - Heterostructure bipolar transistor and manufacture thereof - Google Patents
Heterostructure bipolar transistor and manufacture thereofInfo
- Publication number
- JPS6459956A JPS6459956A JP21881487A JP21881487A JPS6459956A JP S6459956 A JPS6459956 A JP S6459956A JP 21881487 A JP21881487 A JP 21881487A JP 21881487 A JP21881487 A JP 21881487A JP S6459956 A JPS6459956 A JP S6459956A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- high concentrated
- gallium arsenide
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obliterate the potential barrier of a collector junction and enable the formation of a high concentrated p-type germanium base layer by a method wherein a collector electrode and a base electrode are formed on an n-type gallium arsenide thin film and a p-type germanium thin film respectively. CONSTITUTION:A high concentrated n-type gallium arsenide layer 2 of a collector region, a high concentrated p-type germanium layer 4 of a base region, an n-type gallium arsenide layer 5 of an emitter region, and a high concentrated n-type gallium arsenide layer 6 are respectively grown successively on a semi- insulating gallium arsenide substrate 1. However, arsenic is diffused from the high concentrated n-type gallium arsenide layer 2 into the high concentrated p-type germanium layer 4 during growth of the high concentrated p-type germanium, so that an n-type germanium layer 3 is formed at the interface. That is, the base layer consisting of the germanium layers 3 and 4 is made to change gradually from an n-type to a p-type in polarity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218814A JPH0658915B2 (en) | 1987-08-31 | 1987-08-31 | Heterostructure bipolar transistor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218814A JPH0658915B2 (en) | 1987-08-31 | 1987-08-31 | Heterostructure bipolar transistor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6459956A true JPS6459956A (en) | 1989-03-07 |
JPH0658915B2 JPH0658915B2 (en) | 1994-08-03 |
Family
ID=16725761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62218814A Expired - Lifetime JPH0658915B2 (en) | 1987-08-31 | 1987-08-31 | Heterostructure bipolar transistor and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0658915B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003023011A (en) * | 2001-07-05 | 2003-01-24 | Matsushita Electric Ind Co Ltd | Bipolar transistor device and manufacturing method therefor |
JP2007294782A (en) * | 2006-04-27 | 2007-11-08 | Sony Corp | Semiconductor device |
-
1987
- 1987-08-31 JP JP62218814A patent/JPH0658915B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003023011A (en) * | 2001-07-05 | 2003-01-24 | Matsushita Electric Ind Co Ltd | Bipolar transistor device and manufacturing method therefor |
JP2007294782A (en) * | 2006-04-27 | 2007-11-08 | Sony Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0658915B2 (en) | 1994-08-03 |
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