JPS6490581A - Optoelectronic integrated circuit and manufacture thereof - Google Patents

Optoelectronic integrated circuit and manufacture thereof

Info

Publication number
JPS6490581A
JPS6490581A JP24869287A JP24869287A JPS6490581A JP S6490581 A JPS6490581 A JP S6490581A JP 24869287 A JP24869287 A JP 24869287A JP 24869287 A JP24869287 A JP 24869287A JP S6490581 A JPS6490581 A JP S6490581A
Authority
JP
Japan
Prior art keywords
layer
type
emitter
base
stripelike
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24869287A
Other languages
Japanese (ja)
Inventor
Seiji Onaka
Hiraaki Tsujii
Atsushi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP24869287A priority Critical patent/JPS6490581A/en
Publication of JPS6490581A publication Critical patent/JPS6490581A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce crystal defects generated in a boundary of a base-emitter junction by continuously performing crystal growth of the collector layer, base layer and emitter layer of a hetero junction bipolar transistor. CONSTITUTION:An N-type clad layer 102 is formed on a semiinsulating substrate 101, and an active layer 103 and a P-type photoconductive layer 104 are partly formed on the layer 102. Then, a stripelike P-type clad layer 105 is partly formed on the layer 104. Thereafter, an N-type collector layer 111, a P-type base layer 112 and an N-type emitter layer 113 are so formed as to bury the layers 102, 105. An anode electrode 134 is formed on the layer 112 formed on the layer 105. Since this anode electrode 134 is formed wider than the width of a stripelike ridge, the area of a contact can be largely formed.
JP24869287A 1987-10-01 1987-10-01 Optoelectronic integrated circuit and manufacture thereof Pending JPS6490581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24869287A JPS6490581A (en) 1987-10-01 1987-10-01 Optoelectronic integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24869287A JPS6490581A (en) 1987-10-01 1987-10-01 Optoelectronic integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6490581A true JPS6490581A (en) 1989-04-07

Family

ID=17181913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24869287A Pending JPS6490581A (en) 1987-10-01 1987-10-01 Optoelectronic integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6490581A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525346B2 (en) 1999-12-14 2003-02-25 Nec Corporation Semiconductor device and its manufacturing method capable of reducing low frequency noise
JP2005244213A (en) * 2004-01-30 2005-09-08 Nippon Telegr & Teleph Corp <Ntt> Optoelectronic integrated circuit and manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525346B2 (en) 1999-12-14 2003-02-25 Nec Corporation Semiconductor device and its manufacturing method capable of reducing low frequency noise
JP2005244213A (en) * 2004-01-30 2005-09-08 Nippon Telegr & Teleph Corp <Ntt> Optoelectronic integrated circuit and manufacturing method therefor

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