JPS5715466A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5715466A
JPS5715466A JP8922080A JP8922080A JPS5715466A JP S5715466 A JPS5715466 A JP S5715466A JP 8922080 A JP8922080 A JP 8922080A JP 8922080 A JP8922080 A JP 8922080A JP S5715466 A JPS5715466 A JP S5715466A
Authority
JP
Japan
Prior art keywords
region
diode
substrate
type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8922080A
Other languages
Japanese (ja)
Inventor
Toshinori Yoshizawa
Hiroshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8922080A priority Critical patent/JPS5715466A/en
Publication of JPS5715466A publication Critical patent/JPS5715466A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To form a semiconductor device in which a transistor and a diode are connected in series on a same substrate by forming the same conductive type diffused region as a base region on the substrate and then short-circuitting the junction with the substrate. CONSTITUTION:p Type diffused layers are respectively formed on the base and diode forming regions 8a and 8b of a transistor, for example, in an n type substrate 7. An n<+> type emitter layer 9a and an n<+> type layer 9b forming a pn junction of the diode are respectively diffused in the base region 8a and the region 8b. Subsequently, an emitter electrode E, a base electrode B and a diode terminal electrode D are formed, and the substrate 7 and the region 8b are shortcircuitted with the electrode material (aluminum) 10. Thus, a semiconductor device in which the collector of the npn transistor is connected in series with the p type region of the diode can be formed on the same chip, and can also be reduced in size.
JP8922080A 1980-07-02 1980-07-02 Semiconductor device Pending JPS5715466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8922080A JPS5715466A (en) 1980-07-02 1980-07-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8922080A JPS5715466A (en) 1980-07-02 1980-07-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5715466A true JPS5715466A (en) 1982-01-26

Family

ID=13964637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8922080A Pending JPS5715466A (en) 1980-07-02 1980-07-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5715466A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7715284B2 (en) 2004-03-09 2010-05-11 Panasonic Corporation Cassette library device and method of controlling the attitude thereof
DE102008035441B4 (en) * 2007-07-27 2012-04-05 Nec Corp. Cartridge carrying device and cassette carrying method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7715284B2 (en) 2004-03-09 2010-05-11 Panasonic Corporation Cassette library device and method of controlling the attitude thereof
DE102008035441B4 (en) * 2007-07-27 2012-04-05 Nec Corp. Cartridge carrying device and cassette carrying method
US8254053B2 (en) 2007-07-27 2012-08-28 Nec Corporation Cartridge carrying apparatus and cartridge carrying method using notch-engagement projection

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