JPS5736860A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5736860A
JPS5736860A JP11125780A JP11125780A JPS5736860A JP S5736860 A JPS5736860 A JP S5736860A JP 11125780 A JP11125780 A JP 11125780A JP 11125780 A JP11125780 A JP 11125780A JP S5736860 A JPS5736860 A JP S5736860A
Authority
JP
Japan
Prior art keywords
ground
electrode
region
output
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11125780A
Other languages
Japanese (ja)
Inventor
Osamu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11125780A priority Critical patent/JPS5736860A/en
Publication of JPS5736860A publication Critical patent/JPS5736860A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the high frequency characteristic of a transistor by connecting a ground region and a ground electrode to an output region and an output electrode in the back surface side of a semiconductor substrate having output, input and ground operation regions. CONSTITUTION:An n<+> type diffused layer 2 is formed in a p type substrate 1, an n type epitaxial layer 3 is formed on the surface, a p<+> type diffused layer (ground region) 4, a base region 7 and an emitter region 8 are formed, an electrode 6 is then formed via an insulating film 5, the ground metallized layer 13 and emitter electrode 11 of a package substrate 14 having metallized layers 12, 13 (10 represents solder preventing insulating film), and output metallized layer 12 and collector electrode 9 are respectively connected. In this manner preferable high frequency characteristic can be obtained without ground inductance due to emitter bonding wire nor increasing the resistance of the collector electrode.
JP11125780A 1980-08-13 1980-08-13 Semiconductor device Pending JPS5736860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11125780A JPS5736860A (en) 1980-08-13 1980-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11125780A JPS5736860A (en) 1980-08-13 1980-08-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5736860A true JPS5736860A (en) 1982-02-27

Family

ID=14556598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11125780A Pending JPS5736860A (en) 1980-08-13 1980-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5736860A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136075A (en) * 1985-12-09 1987-06-19 Nec Corp Bipolar transistor
JPS62139355A (en) * 1985-12-12 1987-06-23 Nec Corp Semiconductor device
JPS62139356A (en) * 1985-12-12 1987-06-23 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136075A (en) * 1985-12-09 1987-06-19 Nec Corp Bipolar transistor
JPS62139355A (en) * 1985-12-12 1987-06-23 Nec Corp Semiconductor device
JPS62139356A (en) * 1985-12-12 1987-06-23 Nec Corp Semiconductor device

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