JPS5526660A - Semiconductor device and method of manufacturing of the same - Google Patents

Semiconductor device and method of manufacturing of the same

Info

Publication number
JPS5526660A
JPS5526660A JP9965978A JP9965978A JPS5526660A JP S5526660 A JPS5526660 A JP S5526660A JP 9965978 A JP9965978 A JP 9965978A JP 9965978 A JP9965978 A JP 9965978A JP S5526660 A JPS5526660 A JP S5526660A
Authority
JP
Japan
Prior art keywords
layer
film
type
region
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9965978A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Kazuo Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9965978A priority Critical patent/JPS5526660A/en
Publication of JPS5526660A publication Critical patent/JPS5526660A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To materialize a speed-up with a reduced junction capacity by providing a non-dope multi-crystal Si layer on an island-like layer in mounting a transistor and a resistor in a single chip.
CONSTITUTION: An N-type layer 22 is epi-grown on a P-type Si substrate 21 to be covered with a SiO2 film 23, and a through-hole 24a to 24c are provided to form a P+-type isolation region 25a to 25c by a diffusion. Subsequently, a through- opening 26a to 26c are given to the film 23 on an island-like layer 23a to 23d to grow an undoped multi-crystal Si layer 27a to 27c thereon and a non-dope multi- crystal Si layer 28a to 28c on the film 23. Thereafter, the full surface is covered with a SiO2 film 29 and a through-hole 30 is provided. An N+-type region 31 to be entered to a layer 22b is diffusion-grown, through-hole 32 and 33 are formed to diffusion-grow a P-type base region 34 reaching the layers 22b and 22c, as well as a resistor region 35. Next, an opening hole 38 and 39 are again provided in the film 29 to diffusion-grow an N++-type emitter region 40 and collector tapping region 41.
COPYRIGHT: (C)1980,JPO&Japio
JP9965978A 1978-08-16 1978-08-16 Semiconductor device and method of manufacturing of the same Pending JPS5526660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9965978A JPS5526660A (en) 1978-08-16 1978-08-16 Semiconductor device and method of manufacturing of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9965978A JPS5526660A (en) 1978-08-16 1978-08-16 Semiconductor device and method of manufacturing of the same

Publications (1)

Publication Number Publication Date
JPS5526660A true JPS5526660A (en) 1980-02-26

Family

ID=14253165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9965978A Pending JPS5526660A (en) 1978-08-16 1978-08-16 Semiconductor device and method of manufacturing of the same

Country Status (1)

Country Link
JP (1) JPS5526660A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63500627A (en) * 1985-08-19 1988-03-03 モトロ−ラ・インコ−ポレ−テッド Manufacturing of semiconductor devices with buried oxide
JPS6383936U (en) * 1986-11-19 1988-06-01
US4759590A (en) * 1985-11-05 1988-07-26 Toyota Jidosha Kabushiki Kaisha Anti-skid braking system of four-wheel drive vehicle and method for controlling the same
JPH04315604A (en) * 1991-01-29 1992-11-06 Fumiaki Hasegawa Snow removing vehicle

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933434A (en) * 1972-07-20 1974-03-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933434A (en) * 1972-07-20 1974-03-27

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63500627A (en) * 1985-08-19 1988-03-03 モトロ−ラ・インコ−ポレ−テッド Manufacturing of semiconductor devices with buried oxide
US4759590A (en) * 1985-11-05 1988-07-26 Toyota Jidosha Kabushiki Kaisha Anti-skid braking system of four-wheel drive vehicle and method for controlling the same
JPS6383936U (en) * 1986-11-19 1988-06-01
JPH0445395Y2 (en) * 1986-11-19 1992-10-26
JPH04315604A (en) * 1991-01-29 1992-11-06 Fumiaki Hasegawa Snow removing vehicle

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