JPS5712546A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5712546A
JPS5712546A JP8583780A JP8583780A JPS5712546A JP S5712546 A JPS5712546 A JP S5712546A JP 8583780 A JP8583780 A JP 8583780A JP 8583780 A JP8583780 A JP 8583780A JP S5712546 A JPS5712546 A JP S5712546A
Authority
JP
Japan
Prior art keywords
layer
layers
type
substrate
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8583780A
Other languages
Japanese (ja)
Other versions
JPS639667B2 (en
Inventor
Yoshinobu Monma
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8583780A priority Critical patent/JPS5712546A/en
Publication of JPS5712546A publication Critical patent/JPS5712546A/en
Publication of JPS639667B2 publication Critical patent/JPS639667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the complemetnary type device in few processes by forming a PNP bipolar transistor while utilizing a forming process of a bipolar NPN transistor in the cnventional structure. CONSTITUTION:P layes 4, 5 are formed to an N<-> epitaxial layer 3 on a P type Si substrate 1 with an N<+> buried layer 2, and connected to the substrate 1. N layers 6, 7 are shaped to the inside of the P layer 4 and the N<-> layer 3 above the buried layer, P<+> layers 8, 9, 10 are each molded into the P layer 4, the N layer 6 and the N layer 3 above the buried layer 2, and N<+> layers 11, 12 are formed selectively to the N layer 6 and the P<+> layer 10. Thus, the layers 4-6-8 and the layers 3-10-12 respectively constitute the bipolar type PNP and NPN transistors. The surface is coated with an oxide film, an electrode is attached and the complementary type device is completed. According to this constitution, processes can be decreased as compared to conentional devices, frequency cutoff is higher than a conventional substrate collector type transistor and a high-frequency characteristic is improved largely.
JP8583780A 1980-06-26 1980-06-26 Semiconductor device and its manufacture Granted JPS5712546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8583780A JPS5712546A (en) 1980-06-26 1980-06-26 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8583780A JPS5712546A (en) 1980-06-26 1980-06-26 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5712546A true JPS5712546A (en) 1982-01-22
JPS639667B2 JPS639667B2 (en) 1988-03-01

Family

ID=13869967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8583780A Granted JPS5712546A (en) 1980-06-26 1980-06-26 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5712546A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254570A (en) * 1988-08-18 1990-02-23 Fuji Electric Co Ltd Integrated circuit device
EP0792514A1 (en) * 1994-11-04 1997-09-03 Analog Devices, Incorporated Integrated circuit with complementary isolated bipolar transitors and method of making same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254570A (en) * 1988-08-18 1990-02-23 Fuji Electric Co Ltd Integrated circuit device
EP0792514A1 (en) * 1994-11-04 1997-09-03 Analog Devices, Incorporated Integrated circuit with complementary isolated bipolar transitors and method of making same
EP0792514A4 (en) * 1994-11-04 1998-06-17 Analog Devices Inc Integrated circuit with complementary isolated bipolar transitors and method of making same

Also Published As

Publication number Publication date
JPS639667B2 (en) 1988-03-01

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