JPS56112765A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56112765A
JPS56112765A JP1547080A JP1547080A JPS56112765A JP S56112765 A JPS56112765 A JP S56112765A JP 1547080 A JP1547080 A JP 1547080A JP 1547080 A JP1547080 A JP 1547080A JP S56112765 A JPS56112765 A JP S56112765A
Authority
JP
Japan
Prior art keywords
region
type
forming
regions
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1547080A
Other languages
Japanese (ja)
Inventor
Shuichi Kameyama
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1547080A priority Critical patent/JPS56112765A/en
Publication of JPS56112765A publication Critical patent/JPS56112765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain preferable photosensitivity characteristics of the semiconductor device by isolating the second conductivity type semiconductor layer formed on the first conductivity type semiconductor substrate into two regions, forming different elements on the respective regions, and making the transistor and high performance p-n junction coexist thereon. CONSTITUTION:n Type high density buried layers 2-1, 2-2 are formed on a p type Si substrate 1, and an n type semiconductor layer 3 is epitaxially grown thereon. Thereafter, the layer 3 is electrically isolated into two element forming regions via p type element isolating regions 5-1, 5-2, 5-3. An npn transistor is formed by forming an n type semiconductor region 4, a base diffused region 7-2, an emitter diffused region 8, and a collector electrode leading region 6-2 on one element forming region 3-2, and a p-n junction element is formed by forming a p type region 7-1, an electrode leading n type region 6-1 on the other element forming region 3-1.
JP1547080A 1980-02-13 1980-02-13 Semiconductor device Pending JPS56112765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1547080A JPS56112765A (en) 1980-02-13 1980-02-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1547080A JPS56112765A (en) 1980-02-13 1980-02-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112765A true JPS56112765A (en) 1981-09-05

Family

ID=11889677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1547080A Pending JPS56112765A (en) 1980-02-13 1980-02-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112765A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996765A (en) * 1982-11-24 1984-06-04 Mitsubishi Electric Corp Semiconductor image pick-up device
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372488A (en) * 1976-12-08 1978-06-27 Nec Corp Photo semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372488A (en) * 1976-12-08 1978-06-27 Nec Corp Photo semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996765A (en) * 1982-11-24 1984-06-04 Mitsubishi Electric Corp Semiconductor image pick-up device
US5688702A (en) * 1988-02-08 1997-11-18 Kabushiki Kaisha Toshiba Process of making a semiconductor device using a silicon-on-insulator substrate

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